NT6AN8T0SA vs K4A8G085WB-BIWE Perbandingan
Perbandingan bersamaan detil NT6AN8T0SA dari Nanya Technology dan K4A8G085WB-BIWE dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | NT6AN8T0SA | K4A8G085WB-BIWE |
|---|---|---|
| Merek | Nanya Technology | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | LPDDR2 SDRAM | DDR4 SDRAM |
| Density | 2Gb | — |
| Organisasi | 64M x 32 | — |
| Tegangan Pemuat | 1.2V | 1.2 V |
| I/O Voltage | 1.2V | — |
| Laju Data | 1066 Mbps (533 MHz) | 3200 Mbps |
| Rentang Suhu Kerja | -30°C to +85°C | — |
| Paket | FBGA | 78-FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Refresh Period | 64ms at 85°C | — |
| Burst Length | 4 or 8 | — |
| On-Die Termination | Yes | — |
| DLL | Yes | — |
| Ukuran Memori | — | 8 Gb |
| Memory Organization | — | 1G x 8 |
| Suhu Kerja | — | 0°C to +85°C |
| Memory Interface | — | Parallel |
| Access Time | — | [DATA_NEEDED: tRCD, tRP, tRAS] |
| Latensi CAS | — | [DATA_NEEDED: CL value] |
| Refresh | — | Auto-refresh, self-refresh |
| Bebas Halogen | — | Yes |