NT6AN8T0SA vs K4A8G085WB-BIWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci NT6AN8T0SA disebabkan oleh Nanya Technology dan K4A8G085WB-BIWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | NT6AN8T0SA | K4A8G085WB-BIWE |
|---|---|---|
| Merek | Nanya Technology | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | LPDDR2 SDRAM | DDR4 SDRAM |
| Density | 2Gb | — |
| Organisasi | 64M x 32 | — |
| Tegangan Pemberi Arus | 1.2V | 1.2 V |
| I/O Voltage | 1.2V | — |
| Kadar Data | 1066 Mbps (533 MHz) | 3200 Mbps |
| Gambaran Suhu Operasi | -30°C to +85°C | — |
| Kemasan | FBGA | 78-FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Refresh Period | 64ms at 85°C | — |
| Burst Length | 4 or 8 | — |
| On-Die Termination | Yes | — |
| DLL | Yes | — |
| Saiz Ingatan | — | 8 Gb |
| Memory Organization | — | 1G x 8 |
| Suhu Operasi | — | 0°C to +85°C |
| Memory Interface | — | Parallel |
| Access Time | — | [DATA_NEEDED: tRCD, tRP, tRAS] |
| Latensi CAS | — | [DATA_NEEDED: CL value] |
| Refresh | — | Auto-refresh, self-refresh |
| Boson Bebas | — | Yes |