K4A8G085WB-BIWE vs H5AN8G8NDJR Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WB-BIWE disebabkan oleh Samsung Electronics dan H5AN8G8NDJR disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A8G085WB-BIWE | H5AN8G8NDJR |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 8 Gb | — |
| Memory Organization | 1G x 8 | — |
| Kadar Data | 3200 Mbps | 3200 MT/s |
| Tegangan Pemberi Arus | 1.2 V | — |
| Suhu Operasi | 0°C to +85°C | 0°C to +95°C (Tc) |
| Kemasan | 78-FBGA | FBGA-78 (7.5x11 mm) |
| Jenis Pemasangan | Surface Mount | — |
| Memory Interface | Parallel | — |
| Access Time | [DATA_NEEDED: tRCD, tRP, tRAS] | — |
| Latensi CAS | [DATA_NEEDED: CL value] | 22 (typical) |
| Refresh | Auto-refresh, self-refresh | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Boson Bebas | Yes | — |
| Density | — | 8 Gb |
| Organisasi | — | 1G x 8 |
| Supply Voltage (VDD) | — | 1.2 V (1.14V to 1.26V) |
| VDDQ | — | 1.2 V |
| VPP | — | 2.5 V |
| tRCD | — | 22 ns |
| tRP | — | 22 ns |
| Burst Length | — | 8 and 4 (with burst chop) |
| Self-Refresh Current | — | 30 mA (typical) |
| Active Standby Current | — | 60 mA (typical) |
| RoHS | — | Compliant |