K4B4G1646E-BYMATCV vs H5TC4G63AFR-PBA Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646E-BYMATCV disebabkan oleh Samsung Electronics dan H5TC4G63AFR-PBA disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4B4G1646E-BYMATCV - 4Gb DDR3L SDRAM 96-FBGA | Samsung
K4B4G1646E-BYMATCV ✓ Aktif
Pengandingan Spesifikasi
| Parametr | K4B4G1646E-BYMATCV | H5TC4G63AFR-PBA |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $3.98 |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Saiz Ingatan | 4 Gbit (256M x 16) | — |
| Kadar Data | 1866 Mbps | 1866 Mbps (PC3L-14900) |
| Tegangan Pemberi Arus | 1.35 V | — |
| I/O Voltage (VDDQ) | 1.35 V | — |
| Kemasan | 96-ball FBGA | 96-ball FBGA |
| Bilangan Pin | 96 | — |
| Gambaran Suhu Operasi | -40°C to +95°C | 0°C to +95°C (Tcase) |
| Number of Banks | 8 | 8 |
| Burst Length | 8 (with burst chop 4) | 8 and 4 (with burst chop) |
| Latensi CAS | Programmable (e.g., 13, 12, 11) | — |
| On-Die Termination (ODT) | Yes | Yes |
| Auto Precharge | Yes | — |
| Self-Refresh | Yes | — |
| Status RoHS | Compliant | — |
| Density | — | 4Gb |
| Organisasi | — | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | — | 1.35V |
| Ball Pitch | — | 0.8mm |
| CAS Latency (CL) | — | 11, 12, 13 |
| Antaramuka | — | 16-bit I/O |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Partial Array Self-Refresh | — | Yes |
| RoHS | — | Compliant |