K4B4G1646E-BYMATCV vs H5TC4G63AFR-PBA Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4B4G1646E-BYMATCV sa pamamagitan ng Samsung Electronics at H5TC4G63AFR-PBA sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4B4G1646E-BYMATCV - 4Gb DDR3L SDRAM 96-FBGA | Samsung
K4B4G1646E-BYMATCV ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | K4B4G1646E-BYMATCV | H5TC4G63AFR-PBA |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $3.98 |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Laki ng Memory | 4 Gbit (256M x 16) | — |
| Rate ng Data | 1866 Mbps | 1866 Mbps (PC3L-14900) |
| Volte ng Pagbibigay | 1.35 V | — |
| I/O Voltage (VDDQ) | 1.35 V | — |
| Packhaging | 96-ball FBGA | 96-ball FBGA |
| Bilang ng Pins | 96 | — |
| Hanay ng Temperature na Operasyon | -40°C to +95°C | 0°C to +95°C (Tcase) |
| Number of Banks | 8 | 8 |
| Burst Length | 8 (with burst chop 4) | 8 and 4 (with burst chop) |
| Latensya ng CAS | Programmable (e.g., 13, 12, 11) | — |
| On-Die Termination (ODT) | Yes | Yes |
| Auto Precharge | Yes | — |
| Self-Refresh | Yes | — |
| Tindminan RoHS | Compliant | — |
| Density | — | 4Gb |
| Organisasyon | — | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | — | 1.35V |
| Ball Pitch | — | 0.8mm |
| CAS Latency (CL) | — | 11, 12, 13 |
| Interface | — | 16-bit I/O |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Partial Array Self-Refresh | — | Yes |
| RoHS | — | Compliant |