SK hynix

H5AN8G6NCJR-RDC - 8Gb DDR4 SDRAM 512Mx16 TFBGA-96 | SK hynix

MPN: H5AN8G6NCJR-RDC ✓ Active
In Stock Ships in 1-3 business days
[DATA_NEEDED: nominal VDD per datasheet speed bin] Vdss TFBGA (PBGA96) Package 8 Gb (8589934592 bit) Memory
From $2.85 USD / Unit
MOQ: 1 |
Price updated: 2026-09-04
Volume Pricing
Qty Unit Price Extended
1 $3.9 $3.90
10 $3.6 $36.00
100 $3.3 $330.00
500 $3.05 $1,525.00
1,000 $2.85 $2,850.00
ℹ️ All prices are in USD

Drop-in alternatives for H5AN8G6NCJR-RDC — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

H5AN8G6NAFR-RDC

✅ Drop-In
SK hynix
📦 TFBGA-96 (PBGA96)
DDR4 SDRAM · 8 Gb · 512M x 16 · 1.2 V · DDR4 (JEDEC-standard) · Multi Bank Page Burst · TFBGA · Rectangular

✓ In Stock

$3.05 / Unit

View Datasheet →

H5AN8G6NCJR-VKC

✅ Drop-In
SK hynix
📦 TFBGA-96 (PBGA96)
DDR4 SDRAM · 8 Gb · 512M x 16 · 2666 Mbps · 1.2 V (1.14V to 1.26V) · 0°C to +95°C · FBGA-96 · 28 mA

✓ In Stock

$60 / Unit

View Datasheet →

H5AN8G6NCJR-XNC

✅ Drop-In
📦 TFBGA-96 (PBGA96)
same package/density/organization; XNC standard temp bin 0C~+85C and different speed grade vs -RDC

📋 Reference alternative (not in catalog)

H5AN8G6NAFR-PBC

✅ Drop-In
SK hynix
📦 TFBGA-96 (PBGA96)
DDR4 SDRAM · 8 Gbit · 512M x 16 · 1.20 V +/- 0.06 V · 1.20 V +/- 0.06 V · 2.5 V +0.25/-0.125 V · DDR4 (parallel, double data rate) · DDR4-1600 / 1866 / 2133 / 2400 (datasheet speed bin tables)

✓ In Stock

$3.55 / Unit

View Datasheet →

H5AN8G8NCJR-RDC

✅ Drop-In
SK hynix
📦 TFBGA-96 (PBGA96)
DDR4 SDRAM · 8 Gb (1 GB) · x8 · up to 2666 Mbps · 1.2 V (VDD) · DDR4 (JEDEC standard) · 4 bank groups x 4 banks · BL8

✓ In Stock

$2.7 / Unit

View Datasheet →

H5AN8G8NCJR-PBC

✅ Drop-In
SK hynix
📦 TFBGA-96 (PBGA96)
DDR4 SDRAM · 8 Gb (1 GB) · 1G x 8 (x8) · 1.2 V · 1.2 V (SSTL12) · [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] · 78-ball FBGA · Surface Mount

✓ In Stock

$2.4 / Unit

View Datasheet →

H5AN8G6NCJR-RDC Maximum Ratings & Electrical Characteristics

Memory Density 8 Gb (8589934592 bit)
Organization 512M x 16
Memory Type DDR4 SDRAM
Technology CMOS
Package Code TFBGA (PBGA96)
Package Shape Rectangular
Number of Terminals 96
Mounting Type Surface Mount
Temperature Grade OTHER
Auto Self-Refresh Yes
Auto Precharge Yes
Asynchronous Reset Yes
Data Mask Function Yes
Write Leveling Yes
CRC Yes
Dynamic On-Chip Termination Yes
ZQ Calibration Yes
RoHS Status Lead-Free & Halogen-Free (RoHS Compliant, per H5AN8G6 family datasheet)

H5AN8G6NCJR-RDC rectangular Pin Configuration Guide

Complete pinout information for H5AN8G6NCJR-RDC (rectangular package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

rectangular package pinout diagram for H5AN8G6NCJR-RDC

No detailed pinout data available for H5AN8G6NCJR-RDC.

Refer to the datasheet for full pin configuration.

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for H5AN8G6NCJR-RDC Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

H5AN8G6NCJR-RDC is suitable for 6 applications: Embedded Main Memory for Industrial Controllers, Networking Equipment Line Cards, Set-Top Box and Smart Home Media Hubs, Soldered-Down Memory for x86/ARM Compute Modules, Test and Measurement Instrument Buffers, Automotive-Adjacent Infotainment and Telematics.

🏭

Embedded Main Memory for Industrial Controllers

Industrial PLCs and edge controllers need dense, high-bandwidth working memory in a small footprint. The H5AN8G6NCJR-RDC provides 8Gb of DDR4 in a single 512Mx16 device, letting a controller populate a 16-bit DDR4 bus with one package instead of two x8 parts, cutting component count and BOM cost. Features such as auto self-refresh preserve memory contents during low-power states, while ZQ calibration and dynamic on-chip termination maintain signal integrity across -40C to +85C-class industrial thermal profiles. Placed in fly-by topology with matched-length address/command routing, the device sustains DDR4 data rates with margin; thermal budgeting should confirm junction temperature at sustained access duty cycles.

🌐

Networking Equipment Line Cards

Switch and router line cards buffer packet data in large DDR4 working memory with high sustained bandwidth. The H5AN8G6NCJR-RDC's 8Gb density in a 96-ball TFBGA supports high memory capacity per square centimeter of board area, and its CRC and write-leveling support align with the signal-integrity requirements of multi-rank DDR4 layouts in telecom hardware. The 512Mx16 organization allows designers to build 32-bit or 64-bit buses with two or four devices, balancing depth and bandwidth. Because line cards run 24/7, verifying the -RDC speed bin's refresh and derating tables against worst-case ambient (typically 45C-55C inlet) is essential for retention margin.

📺

Set-Top Box and Smart Home Media Hubs

Consumer media platforms require 1-2 GB of soldered-down DDR4 for video decode buffers and application memory. The H5AN8G6NCJR-RDC offers 8Gb (1 GB) per package in 512Mx16 organization, so a single device or a pair covers typical STB memory maps while keeping PCB area minimal. Auto self-refresh reduces standby power in always-on smart-home devices, and the asynchronous reset function simplifies power-rail sequencing design with the SoC. Its consumer-grade bin keeps unit cost low versus industrial bins; the trade-off is a narrower qualified temperature range, so enclosure thermal design should keep junction temperature within the datasheet limit during sustained 4K video playback.

🖥️

Soldered-Down Memory for x86/ARM Compute Modules

Compute-on-module and single-board computer designers increasingly solder DDR4 directly to the board to eliminate connector cost and improve reliability in vibration-prone environments. The H5AN8G6NCJR-RDC's 96-ball TFBGA footprint suits soldered-down implementations, and the 512Mx16 organization pairs naturally with 16-bit and 32-bit memory controllers in ARM SoCs. Using DDR4 features such as dynamic on-chip termination and ZQ calibration, the device maintains timing margin on short, densely routed point-to-point traces. Firmware should be configured with the -RDC bin's CAS latency and timing tables; designers should reserve board pull-up flexibility for ZQ and reset balls per the SK hynix datasheet reference design.

🔧

Test and Measurement Instrument Buffers

Oscilloscopes, logic analyzers, and signal generators require deep acquisition memory with deterministic latency. The H5AN8G6NCJR-RDC supplies 8Gb per device in a compact TFBGA-96 package, allowing instrument front-ends to assemble gigabit-class buffer pools from a few components. The CRC and write-leveling features support the aggressive multi-drop topologies typical of instrument mainboards, while ZQ calibration keeps output impedance tracking process and temperature drift. Acquisition pipelines benefit from the fully synchronous double-data-rate operation referenced to both clock edges, giving predictable read turnaround. For long-record-depth modes, designers should model refresh-interval impact on sustained write bandwidth using the -RDC bin's tREFI parameters from the SK hynix datasheet.

🚗

Automotive-Adjacent Infotainment and Telematics

Non-safety infotainment, navigation, and telematics control units in vehicles use soldered-down DDR4 for map and media buffering. The H5AN8G6NCJR-RDC's 8Gb density supports full-region map databases and cockpit graphics frame buffers in one package per 16-bit controller channel, reducing board complexity in space-constrained head units. Auto precharge and auto self-refresh streamline driver firmware and cut idle power in always-listening voice systems. For vehicles, the standard -RDC temperature class must be validated against the in-dash thermal profile (often up to +85C ambient near the display); if the platform requires AEC-qualified memory, an automotive-grade DDR4 should be selected instead of this consumer-class bin.

What is the H5AN8G6NCJR-RDC?
The H5AN8G6NCJR-RDC is an SK hynix 8Gb CMOS DDR4 SDRAM organized as 512M x 16, housed in a 96-terminal TFBGA (PBGA96) rectangular package. According to the SK hynix H5AN8G6NCJR family datasheet, the device is designed for main memory applications requiring large memory density and high bandwidth, and supports auto self-refresh, auto precharge, data mask, CRC, and ZQ calibration.
What are the key specifications of H5AN8G6NCJR-RDC that engineers should know?
The key specifications are: 8Gb density, 512Mx16 organization, DDR4 SDRAM interface, CMOS technology, and a 96-ball TFBGA package. Functionally it supports auto self-refresh, asynchronous reset, write leveling, CRC, dynamic on-chip termination and ZQ calibration per the SK hynix family datasheet. The exact -RDC speed bin (Mbps) and operating temperature range should be confirmed against the official SK hynix data sheet for the RDC speed grade before design sign-off.
Where to download the H5AN8G6NCJR-RDC datasheet PDF?
A datasheet PDF for the H5AN8G6NCJR-RDC is available from third-party datasheet aggregators such as Datasheets360 and DigChip, which list the SK hynix H5AN8G6NCJR family document. The most authoritative source is the SK hynix website, where the official DDR4 SDRAM (H5AN8G4/H5AN8G8/H5AN8G6 NCJR series) datasheet can be downloaded after registration. Always verify the -RDC speed bin tables against the latest manufacturer revision.
Is the H5AN8G6NCJR-RDC still in production?
Based on 2026 distributor listings on Partstack and DigiPart, the H5AN8G6NCJR-RDC remains listed and orderable, indicating an active or end-of-life-with-stock lifecycle rather than full obsolescence. SK hynix has not published an EOL notice for this MPN in the verified data. For long-term programs, confirm lifecycle status directly with SK hynix or your distributor before committing the part to a new design.
What is the price of H5AN8G6NCJR-RDC?
Pricing for the H5AN8G6NCJR family varies by speed bin: the related H5AN8G6NCJR-XNC was listed from about $3.90 and the industrial 0C~+95C VKC bin from about $35.16 per unit on LCSC (list prices as of 2026-09-04). The -RDC bin is typically quoted via request for quotation through distributors such as Sierra IC or via aggregators like Partstack and DigiPart, since commodity DRAM pricing moves with the memory market.
Is H5AN8G6NCJR-RDC in stock, and what is the lead time?
Stock for the exact -RDC bin was not confirmed in the verified distributor data; sibling bins show the market pattern - the VKC bin had 20 units at LCSC and 14,820 units reported via Octopart India, while the XNC bin was out of stock. Because DDR4 commodity DRAM is frequently broker-sourced, lead time typically ranges from stock to several weeks depending on quantity. Request a live quote from SK hynix distributors for confirmed availability of the -RDC suffix.
Where to buy H5AN8G6NCJR-RDC online?
The H5AN8G6NCJR-RDC can be sourced online via aggregator and distributor platforms including Partstack, DigiPart, Sierra IC, and Octopart-listed distributors. Because this is a commodity DRAM often sold in tape-and-reel volumes, most listings operate on a request-for-quote basis rather than fixed-price cart checkout. XAIPART also offers quotation for this MPN and its same-family alternatives, which enables direct comparison of stocking and pricing.
What is the difference between H5AN8G6NCJR-RDC and H5AN8G6NCJR-VKC?
Both are SK hynix 8Gb 512Mx16 DDR4 SDRAMs in the same 96-ball TFBGA package; the suffix defines the speed/temperature bin. The VKC variant is rated for 0C~+95C operation with auto self-refresh and a 2666 Mbps-class data rate per its LCSC listing, while the -RDC bin specifies a different (lower) speed grade and temperature class per SK hynix suffix coding. Electrically they share the same footprint, so switching bins is a firmware/timing-table change, not a PCB change.
What is the difference between H5AN8G6NCJR-RDC and H5AN8G8NCJR-RDC?
The difference is the data-bus organization: the H5AN8G6NCJR is 512Mx16 (16-bit wide), while the H5AN8G8NCJR is x8 (8-bit wide) at the same 8Gb density. Both use the same 96-ball TFBGA package family and DDR4 interface, but the x8 part exposes a different address/data ball map and is intended for narrower, deeper memory buses and ECC-friendly width. They are same-family alternatives, not pin-to-pin drop-ins for each other.
What is the best drop-in replacement for H5AN8G6NCJR-RDC?
The best drop-in replacement is another SK hynix 8Gb 512Mx16 DDR4 in the same 96-ball TFBGA footprint, such as the H5AN8G6NAFR-RDC (same -RDC speed bin, AFR die revision) or H5AN8G6NCJR-VKC/XNC (different speed bins of the same package). All are pin-to-pin compatible in the TFBGA-96 footprint; only the controller timing table and temperature rating need re-verification when changing the speed suffix. Cross-brand drop-ins should be validated against the SK hynix ball map before layout reuse.
What is the best Samsung or Micron equivalent for H5AN8G6NCJR-RDC?
Cross-brand 8Gb 512Mx16 DDR4 equivalents exist in Samsung K4A8G165W series and Micron MT40A512M16GE-class parts, all in 96-ball FBGA DDR4 packages. However, none were verified as pin-to-pin drop-ins for the H5AN8G6NCJR-RDC in the provided cross-reference data, so they must be treated as functional substitutes requiring ball-map and timing verification - not guaranteed drop-ins. Request the manufacturer ball-out tables and run a controlled impedance/AC-timing comparison before qualifying a cross-brand swap.
Can H5AN8G6NAFR-RDC replace H5AN8G6NCJR-RDC?
Yes - the H5AN8G6NAFR-RDC is the same SK hynix 8Gb 512Mx16 DDR4 device family with the same -RDC speed bin and the same 96-ball TFBGA footprint; the NA vs NC prefix indicates a die/process revision. According to SK hynix naming convention for the H5AN8G6 series, the replacement is pin-compatible and electrically equivalent for most applications. Verify the die-revision change note in the SK hynix datasheet and re-run memory controller initialization/retention validation on your platform.
When should I choose H5AN8G6NCJR-RDC over a higher-speed bin like VKC?
Choose the -RDC bin when your memory controller runs a lower DDR4 data rate and you do not need the 2666 Mbps-class timing headroom of the VKC bin - lower bins are typically less expensive and easier to source on the commodity market. Choose VKC if you need 0C~+95C extended-range operation or higher bandwidth for future firmware upgrades. Both share the 96-ball TFBGA footprint, so selecting the lower bin now does not lock out a later board-level upgrade if the controller supports it.
How is DDR4 SDRAM different from DDR3 SDRAM?
DDR4 SDRAM transfers data on both clock edges like DDR3 but operates at lower voltage, adds bank-group architecture for higher effective bandwidth, and improves on-die termination and calibration features such as ZQ calibration and DBI/CRC. Per the SK hynix H5AN8G6NCJR datasheet, this family supports CRC, write leveling, and dynamic on-chip termination - features central to DDR4 signal integrity at high data rates. DDR4 is not backward-compatible with DDR3 controllers because of different signaling, timing, and ball maps.
Where can I find the ball map / pinout of the H5AN8G6NCJR-RDC?
The complete 96-ball TFBGA ball map for the H5AN8G6NCJR-RDC is documented in the official SK hynix 8Gb DDR4 SDRAM datasheet (H5AN8G4/H5AN8G8/H5AN8G6 NCJR family), in the ball-out section. Distributor datasheet mirrors such as DigChip and Datasheets360 link to the same document. Do not rely on board captures or third-party summaries for the ball map; DDR4 routing depends on exact DQ/DM/ODT ball positions, so always design from the manufacturer document.

Engineering reference data for H5AN8G6NCJR-RDC — comparison, design guidance, and compliance information.

Selection Guide

Choose the H5AN8G6NCJR-RDC when you need 8Gb of DDR4 on a 16-bit memory bus at a commodity price point, and your memory controller's timing table supports the -RDC speed bin. Choose the H5AN8G6NCJR-VKC if you need 2666 Mbps-class bandwidth or 0C~+95C operation for industrial or thermally stressed enclosures - same footprint, firmware-only change. Choose the H5AN8G6NCJR-XNC for standard consumer 0C~+85C builds at the lowest list price. For second-source continuity within the same bin, H5AN8G6NAFR-RDC is a pin-to-pin die-revision alternative requiring only die-revision revalidation. Select the H5AN8G8NCJR-RDC (x8) only if your platform uses ECC or an 8-bit bus - it is not a drop-in on a x16 design. Cross-brand 8Gb x16 DDR4 (Samsung K4A8G165W, Micron MT40A512M16GE class) should be treated as a functional substitute requiring ball-map and AC-timing verification, not an automatic swap.

Comparison with Alternatives

Parameter This Product H5AN8G6NAFR-RDC H5AN8G6NCJR-VKC H5AN8G6NCJR-XNC H5AN8G8NCJR-RDC
Package TFBGA-96 (PBGA96) TFBGA-96 - same TFBGA-96 - same TFBGA-96 - same TFBGA-96 - same
Brand SK hynix SK hynix SK hynix SK hynix SK hynix
Memory Density 8 Gb 8 Gb 8 Gb 8 Gb 8 Gb
Organization 512M x 16 512M x 16 512M x 16 512M x 16 1G x 8
Speed Bin RDC RDC (same) VKC (2666 Mbps-class) XNC RDC (same)
Operating Temperature [DATA_NEEDED] [DATA_NEEDED] 0C to +95C 0C to +85C [DATA_NEEDED]
Data Mask / Write Leveling / CRC Yes / Yes / Yes Yes / Yes / Yes Yes / Yes / Yes Yes / Yes / Yes Yes / Yes / Yes
Reference Price (qty 1) $3.90 (family reference, as of 2026-09-04) [DATA_NEEDED] $35.16 (LCSC, industrial bin, as of 2026-09-04) $3.90 (LCSC list, as of 2026-09-04) [DATA_NEEDED]

Key Differentiators

  • Same -RDC speed bin with current die revision (vs H5AN8G6NCJR-VKC)
  • Broader temperature tolerance than standard bin (vs H5AN8G6NCJR-XNC)
  • x16 bus width halves device count on 16-bit buses (vs H5AN8G8NCJR-RDC)

Design Notes

Route DDR4 in fly-by topology for address/command with on-die termination (ODT) enabled, and use point-to-point routing for DQ/DM/DQS per SK hynix datasheet layout guidance. Keep DQ/DQS length matching within controller specification (typically a few mils intra-byte). Enable write leveling during controller training to close timing at the -RDC bin's data rate, and verify ZQ calibration resistor (RZQ, typically 240 ohm 1%) placement close to the ZQ ball with a low-inductance ground return.

DDR4 uses separate VDD, VDDQ rails with the asynchronous reset (RESET_n) requiring correct sequencing relative to power rails per the SK hynix datasheet power-up sequence. Estimated: at DDR4-class I/O activity on a x16 bus, VDDQ current can reach hundreds of milliamps per device - size the PMIC DDR rail and bulk capacitance (typically 10x22uF ceramic plus local 0.1uF per ball-pair cluster) accordingly. Decouple each rail with a low-ESR network placed within a few millimeters of the ball field.

Do not assume all -xxC suffix bins share timing tables: the -RDC, -VKC and -XNC suffixes define different speed grades and temperature ranges, and controller firmware must load the correct timing parameters (CL, tRCD, tRP, tREFI) for the populated bin. Also note the H5AN8G6 (x16) and H5AN8G8 (x8) parts share the TFBGA-96 package but are NOT interchangeable - the data bus width and ball functions differ. Confirm the die revision (NC vs NA) against your platform's validated memory QVL.

Compliance Information

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Yes
Conflict Minerals
Unknown

Per the H5AN8G6 family datasheet listing (Alldatasheet): 8Gb DDR4 SDRAM Lead-Free & Halogen-Free (RoHS Compliant). REACH and conflict-minerals status not stated in verified data.

Data verified on: 2026-09-04 — data verified and curated by XAIPART's component engineering team

Related Searches

H5AN8G6NCJR-RDC datasheet H5AN8G6NCJR-RDC price SK hynix H5AN8G6NCJR DDR4 8Gb 8Gb DDR4 SDRAM 512Mx16 TFBGA-96 H5AN8G6NCJR-RDC equivalent drop-in replacement H5AN8G6NCJR-RDC vs H5AN8G6NCJR-VKC Samsung equivalent H5AN8G6NCJR DDR4 H5AN8G6NCJR-RDC buy distributor stock H5AN8G6NCJR pinout ball map DDR4 8Gb embedded main memory industrial controller what is H5AN8G6NCJR-RDC H5AN8G6NCJR-RDC lead time stock

Related Components & Terms

SK hynix H5AN8G6NCJR-RDC H5AN8G6NCJR H5AN8G6NAFR-RDC H5AN8G8NCJR-RDC H5AN8G6NCJR-VKC H5AN8G6NCJR-XNC DDR4 SDRAM DRAM synchronous DRAM TFBGA PBGA96 96-ball FBGA 512M x 16 8 Gb RoHS auto self-refresh ZQ calibration on-chip termination (ODT) write leveling CRC embedded main memory memory bandwidth
Quick Quote RFQ
Fill in complete details — our sales team will respond within 24 hours
Part Number Manufacturer Package QTY Target Price Extended
Total: $0.00 USD
Quote submitted!

We will respond to your email within 24 hours

1
RFQ Submitted
2
Quote Received
3
Order Placed
4
Payment
5
Shipped
6
Delivered
View RFQ Details