H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 2400MT/s | SK Hynix
料号： H5AN8G6NAFR-UHC ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0.1944 | $0.19 |
| 10 | $0.1944 | $1.94 |
| 100 | $0.1944 | $19.44 |
| 500 | $0.1944 | $97.20 |
| 1,000 | $0.1944 | $194.40 |
H5AN8G6NAFR-UHC 概述
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR memory hierarchy, succeeding DDR3. A DRAM stores each bit in a capacitor-based cell and requires periodic refresh; DDR4 doubles bank-group parallelism versus DDR3, lowers operating voltage to 1.2V, and transfers data on both rising and falling clock edges referenced to a differential clock (CK_t/CK_c).
Key features of this device include fully synchronous operation referenced to both edges of the differential clock, an asynchronous reset function, auto self-refresh and auto precharge, a data mask (DM) function for byte-wise write masking, dynamic on-chip termination (ODT), ZQ calibration, CRC function, and write leveling. Per LCSC product data, the device operates from 0C to +85C.
Architecturally, all address and control input signals are sampled on the crossing of the positive edge of CK_t and negative edge of CK_c, while data is captured relative to data strobes (DQS_t/DQS_c) supporting source-synchronous timing. The 512M x 16 organization provides a 16-bit data width suited to embedded CPUs, industrial controllers, and memory-down designs that avoid DIMM connectors.
Typical applications include main memory for embedded and industrial systems, networking equipment, set-top boxes, and high-bandwidth buffer memory in storage and imaging systems where large density and high bandwidth are required.
A key design consideration is DDR4 signal integrity: routing length matching of DQ to DQS, ZQ resistor placement, and proper VDDQ termination planning are essential; the dynamic ODT and write-leveling features of this part help manage fly-by command routing on multi-device buses.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
直接替换替代料： H5AN8G6NAFR-UHC ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： H5AN8G6NAFR-UHC （相同外形与封装尺寸） ——差异在于 Package, Data Rate, Memory Type, Density, RoHS Status.
快速对比工具——选择替代料号进行并排对比：
H5AN8G6NAFR-RDC
✅ 直接替换✓ 有现货
$3.05 / 个
查看数据手册 →H5AN8G6NAFR-PBC
✅ 直接替换✓ 有现货
$3.55 / 个
查看数据手册 →H5AN8G6NCJR-VKC
✅ 直接替换✓ 有现货
$60 / 个
查看数据手册 →H5AN8G6NDJR
✅ 直接替换✓ 有现货
$35 / 个
查看数据手册 →MT40A512M16JY-075E
✅ 直接替换✓ 有现货
$30.5 / 个
查看数据手册 →H5AN8G6NAFR-UHC 最大额定值与电气特性
| 存储器类型 | DDR4 SDRAM (CMOS) |
| Memory Density | 8 Gbit |
| 存储组织 | 512M x 16 |
| 电源电压 | 1.2 V |
| 数据速率 | 2400 MT/s |
| Clock Architecture | Differential clock (CK_t / CK_c), fully synchronous |
| 封装 | 96-ball FBGA (TFBGA) |
| 安装类型 | Surface Mount |
| 工作温度 | 0C to +85C |
| Refresh | Auto self-refresh |
| Precharge | Auto precharge function |
| Reset | Asynchronous reset function |
| Data Mask | DM function supported |
| Termination | Dynamic on-chip termination (ODT) |
| Calibration | ZQ calibration function |
| Error Checking | CRC function |
| Write Leveling | Write leveling function supported |
H5AN8G6NAFR-UHC 96-ball fbga (tfbga) 引脚配置指南
H5AN8G6NAFR-UHC（96-ball fbga (tfbga) 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： H5AN8G6NAFR-UHC.
请参阅 数据手册 以查看完整引脚配置。
典型应用
H5AN8G6NAFR-UHC 适用于 6 应用s: Embedded Main Memory, Industrial Control and Automation, Networking and Communication Equipment, Set-Top Boxes and Smart TV Platforms, Storage Systems and SSD Controllers, Imaging and Vision Buffer Memory.
Embedded Main Memory
The H5AN8G6NAFR-UHC serves as main system memory for embedded processors and SoCs with x16 DDR4 memory controllers. Its 8Gbit density in a single 96-ball FBGA device provides 512M x 16 organization, allowing 1GB or 2GB systems with two or four devices memory-down on the PCB. The 2400MT/s data rate delivers up to 4.8 GB/s peak bandwidth per device at 1.2V, sufficient for Linux-class embedded platforms. Features such as auto self-refresh preserve memory contents during low-power states, while dynamic ODT simplifies multi-device fly-by routing without external termination networks.
推荐
Industrial Control and Automation
Industrial PCs, PLCs, and motion controllers require large memory density with high bandwidth for real-time control loops and HMI rendering. The H5AN8G6NAFR-UHC supplies 8Gbit per device with the asynchronous reset function enabling deterministic power-up sequencing in noisy factory environments. Its 0C to +85C operating range covers most industrial cabinets with forced or natural convection. The CRC function adds data-integrity checking on the command/address bus, reducing silent corruption risk in electrically noisy settings near variable-frequency drives and switching loads.
推荐
Networking and Communication Equipment
Routers, switches, and network-attached storage platforms use DDR4 for packet buffering, flow tables, and control-plane software. The H5AN8G6NAFR-UHC provides 4.8 GB/s peak bandwidth at 2400MT/s, and its ZQ calibration maintains output driver impedance accuracy across temperature drift, critical for 24/7 network hardware. Multiple devices on a shared fly-by address bus benefit from write leveling and dynamic ODT, which the device fully supports. The 96-ball FBGA surface-mount format allows memory-down placement directly on switch main boards without DIMM connectors, saving board area and height.
推荐
Set-Top Boxes and Smart TV Platforms
Digital media and TV platforms with integrated DDR4 controllers use x16 DRAM devices for cost-effective single-chip memory configurations. The H5AN8G6NAFR-UHC offers a 16-bit-wide bus that matches consumer SoC memory interfaces, delivering 4.8 GB/s peak bandwidth for 4K video decode buffering. Auto self-refresh minimizes standby power during always-on wake scenarios, and the data mask function enables efficient partial writes for frame-buffer updates. Its commercial 0C to +85C range matches consumer electronics environmental requirements at a commodity price point.
推荐
Storage Systems and SSD Controllers
Enterprise and consumer SSD controllers use external DRAM for firmware execution and NAND mapping tables. An 8Gbit device such as the H5AN8G6NAFR-UHC provides 1GB per x16 device, sufficient for mapping tables of multi-terabyte drives. The 2400MT/s rate with full synchronicity to both clock edges gives controllers low-latency random access to mapping data, directly improving small-block IOPS. ZQ calibration and dynamic ODT preserve signal integrity across drive thermal cycles, while the asynchronous reset input allows the SSD controller to recover the DRAM deterministically during power-fail sequences.
推荐
Imaging and Vision Buffer Memory
Machine-vision cameras and medical imaging pipelines capture high-resolution frames that must be buffered before processing. The H5AN8G6NAFR-UHC offers 512M x 16 organization with 4.8 GB/s peak bandwidth, adequate for sustained streaming of multiple high-resolution sensor channels into frame buffers. The data mask function enables partial frame-region updates without read-modify-write cycles, and CRC protects the command/address path during long-duration captures. Its memory-down FBGA-96 format fits inside compact camera head assemblies where connector-based memory is impractical.
推荐
推荐产品汇总
工程参考数据： H5AN8G6NAFR-UHC ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | H5AN8G6NAFR-RDC | H5AN8G6NAFR-PBC | H5AN8G6NCJR-VKC | MT40A512M16JY-075E |
|---|---|---|---|---|---|
| Package | 96-ball FBGA (TFBGA) | 96-ball FBGA - same | 96-ball FBGA - same | 96-ball FBGA - same | 96-ball FBGA - same |
| Brand | SK hynix | SK hynix | SK hynix | SK hynix | Micron Technology |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Die Revision | AFR (xxC family) | AFR - same | AFR - same | CJR - newer | Micron 8Gb DDR4 |
关键差异点
- Native x16 organization in a single 8Gb device （对比 H5AN8G8NAFR-UHC)
- Newer-generation die available in same footprint （对比 H5AN8G6NCJR-VKC)
- Cross-brand supply-chain hedge （对比 MT40A512M16JY-075E)
设计说明
At 2400MT/s, keep DQ-to-DQS length mismatch within the controller's skew budget (typically a few tens of picoseconds; check your controller spec). Route CK_t/CK_c as a tightly coupled differential pair and reference all high-speed traces to a continuous ground plane. Use IBIS models from SK Hynix for pre-layout simulation; enable write leveling in the controller to compensate fly-by clock skew across devices.
Place the ZQ calibration resistor (240 ohm, 1% tolerance) within a few millimeters of the ZQ ball with a short, low-inductance ground return - ZQ accuracy directly sets output driver impedance. Provide at least one 0.1uF ceramic decoupling capacitor per VDD/VDDQ ball pair plus bulk capacitance per device. Drive RESET_n low during power-rail ramp to keep outputs high-impedance and prevent bus contention during controller boot.
Do not substitute suffix variants (-UHC vs -RDC vs -PBC) without re-verifying speed bin and self-refresh temperature grade against your memory controller training tables - the suffixes encode different operating points of the same die. Also, x16 parts like this one use a single DQS pair per byte-pair and are NOT pin-compatible with x8 organized parts in similar FBGA packages; confirm organization before second-sourcing.
合规信息
Compliance status not stated in provided web data; consult the SK Hynix product page or LCSC listing C499916 for RoHS/REACH declarations.
