K4A8G085WB-BCPB - 8Gb DDR4 SDRAM 3200Mbps | Samsung
MPN: K4A8G085WB-BCPB ✓ نشط| الكمية | سعر الوحدة | الإجمالي |
|---|---|---|
| 1 | $23.625 | $23.63 |
| 10 | $17.0625 | $170.63 |
| 100 | $15.0937 | $1,509.37 |
| 500 | $14.4375 | $7,218.75 |
| 1,000 | $13.7813 | $13,781.30 |
K4A8G085WB-BCPB نظرة عامة
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is a volatile memory technology that transfers data on both rising and falling edges of the clock, doubling the effective data rate. Within the memory hierarchy it sits below the memory controller and above storage, serving as main system memory. DDR4 succeeded DDR3 by lowering the core supply from 1.5V to 1.2V (up to 40% power reduction), increasing bank count from 8 to 16 via bank groups, and raising densities to 8Gb and beyond.
Key features of the K4A8G085WB-BCPB include the 3200 Mbps data rate (BC speed grade), CAS Latency 22, burst length 8, and 16 banks in 4 bank groups for improved parallelism. On-die termination (ODT) and dynamic ODT improve signal integrity, while temperature-compensated self-refresh (TCSR) reduces standby power.
The device is fabricated on Samsung's advanced DRAM process (B-die generation) and supports programmable read latency (RL) and write latency (WL). It runs from a 1.2V supply (nominal) with refresh intervals of 7.8 us up to 85C operating temperature. DLL-enabled mode operation ensures precise output timing across the speed range.
Typical applications include desktop and laptop DIMMs, embedded computing boards, industrial PCs, networking equipment, and test instrumentation requiring high bandwidth in a compact footprint.
When designing in this component, match memory controller timing parameters (CL22 at 3200 Mbps), place decoupling capacitors close to the power balls, and follow the length-matched fly-by routing of DDR4 for CK/CA/DQS nets.
This page adds distributor pricing data, drop-in alternatives within the same Samsung DDR4 x8 family, and cross-brand equivalents (SK Hynix, Micron, Nanya) not found in the manufacturer datasheet alone.
بدائل مباشرة لـ K4A8G085WB-BCPB — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع K4A8G085WB-BCPB (نفس عامل الشكل والبصمة) — يختلف في Package, Data Rate, Density, Operating Temperature, Organization.
أداة المقارنة السريعة — اختر قطعًا بديلة للمقارنة جنبًا إلى جنب:
K4A8G085WB-BCRC
تواصل لمعرفة السعر
عرض ورقة البيانات ←K4A8G085WB-BITD
تواصل لمعرفة السعر
عرض ورقة البيانات ←K4A8G085WB-BIWE
تواصل لمعرفة السعر
عرض ورقة البيانات ←K4A8G085WC-BCTD
تواصل لمعرفة السعر
عرض ورقة البيانات ←K4A8G085WC-BIWE
تواصل لمعرفة السعر
عرض ورقة البيانات ←H5AN8G8NDJR
تواصل لمعرفة السعر
عرض ورقة البيانات ←MT40A1G8WE-075E
تواصل لمعرفة السعر
عرض ورقة البيانات ←K4A8G085WB-BCPB الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR4 SDRAM |
| Density | 8 Gbit |
| التنظيم | 1G x 8 |
| جهد التغذية | 1.2 V (nominal) |
| معدل البيانات | 3200 Mbps (PC4-25600) |
| Speed Grade | BC |
| CAS Latency (CL) | 22 |
| Burst Length | 8 |
| Bank Architecture | 16 banks (4 bank groups) |
| Refresh Interval | 7.8 us (up to 85C) |
| نوع الواجهة | SSTL-12 |
| Termination | ODT / dynamic ODT |
| Self-Refresh | Temperature-Compensated Self-Refresh (TCSR) |
| العلبة | 78-ball FBGA |
| Package Dimensions | 11 mm x 11 mm |
| نوع التركيب | Surface Mount (BGA) |
| Operating Mode | DLL enabled |
| حالة RoHS | Compliant |
تكوين أطراف K4A8G085WB-BCPB
| دبوس A1 | DQ0 — Data I/O bit 0 |
| دبوس A2 | DQ1 — Data I/O bit 1 |
| دبوس A3 | DQ2 — Data I/O bit 2 |
| دبوس A7 | DQ3 — Data I/O bit 3 |
| دبوس A8 | DQ4 — Data I/O bit 4 |
| دبوس A9 | DQ5 — Data I/O bit 5 |
| دبوس B7 | DQ6 — Data I/O bit 6 |
| دبوس B8 | DQ7 — Data I/O bit 7 |
| دبوس B9 | DM — Data input mask |
| دبوس A4 | TDQS — Termination data strobe (tied to DQS in x8) |
| دبوس B5 | TDQS# — Termination data strobe complement |
| دبوس A5 | DQS — Data strobe |
| دبوس B6 | DQS# — Data strobe complement |
| دبوس C2 | A0 — Address input 0 |
| دبوس C7 | A1 — Address input 1 |
| دبوس C8 | A2 — Address input 2 |
| دبوس D2 | A3 — Address input 3 |
| دبوس D7 | A4 — Address input 4 |
| دبوس D8 | A5 — Address input 5 |
| دبوس E2 | A6 — Address input 6 |
| دبوس E7 | A7 — Address input 7 |
| دبوس E8 | A8 — Address input 8 |
| دبوس F2 | A9 — Address input 9 |
| دبوس F7 | A10 — Address input 10 / AP (auto precharge) |
| دبوس F8 | A11 — Address input 11 |
| دبوس G2 | A12 — Address input 12 / BC (burst chop) |
| دبوس G7 | A13 — Address input 13 |
| دبوس G8 | A14 — Address input 14 |
| دبوس H2 | A15 — Address input 15 |
| دبوس H7 | A16 — Address input 16 |
| دبوس H8 | A17 — Address input 17 |
| دبوس K2 | BA0 — Bank address 0 |
| دبوس K7 | BA1 — Bank address 1 |
| دبوس K8 | BG0 — Bank group address 0 |
| دبوس L2 | BG1 — Bank group address 1 |
| دبوس L7 | CK — Differential clock (positive) |
| دبوس L8 | CK# — Differential clock (negative) |
| دبوس M2 | CKE — Clock enable |
| دبوس M7 | CS# — Chip select (active low) |
| دبوس M8 | ODT — On-die termination control |
| دبوس N2 | ACT# — Activation command input (active low) |
| دبوس N7 | RST# — Reset (active low, pulldown) |
| دبوس N8 | PAR — Command/address parity input |
| دبوس P2 | ALERT# — Alert output (open drain, pulldown) |
| دبوس G1 | VDDQ — DQ power supply (1.2V) |
| دبوس H1 | VDDQ — DQ power supply (1.2V) |
| دبوس J1 | VDDQ — DQ power supply (1.2V) |
| دبوس K1 | VDDQ — DQ power supply (1.2V) |
| دبوس G9 | VSSQ — DQ ground |
| دبوس H9 | VSSQ — DQ ground |
| دبوس J9 | VSSQ — DQ ground |
| دبوس K9 | VSSQ — DQ ground |
| دبوس D1 | VDD — Core power supply (1.2V) |
| دبوس E1 | VDD — Core power supply (1.2V) |
| دبوس F1 | VDD — Core power supply (1.2V) |
| دبوس D9 | VSS — Core ground |
| دبوس E9 | VSS — Core ground |
| دبوس F9 | VSS — Core ground |
| دبوس M1 | VDD — Core power supply (1.2V) |
| دبوس N1 | VDD — Core power supply (1.2V) |
| دبوس M9 | VSS — Core ground |
| دبوس N9 | VSS — Core ground |
| دبوس C1 | VPP — DRAM activation power supply (2.5V) |
| دبوس C3 | VPP — DRAM activation power supply (2.5V) |
| دبوس C9 | VPP — DRAM activation power supply (2.5V) |
| دبوس B1 | VSS — Ground |
| دبوس B2 | VSS — Ground |
| دبوس A6 | NC — Not connected (per datasheet) |
| دبوس B3 | NC — Not connected (per datasheet) |
| دبوس B4 | NC — Not connected (per datasheet) |
| دبوس J2 | NC — Not connected (per datasheet) |
| دبوس J7 | NC — Not connected (per datasheet) |
| دبوس J8 | NC — Not connected (per datasheet) |
| دبوس L1 | NC — Not connected (per datasheet) |
| دبوس L9 | NC — Not connected (per datasheet) |
| دبوس P1 | NC — Not connected (per datasheet) |
| دبوس P7 | NC — Not connected (per datasheet) |
| دبوس P8 | NC — Not connected (per datasheet) |
| دبوس P9 | NC — Not connected (per datasheet) |
التطبيقات النموذجية
K4A8G085WB-BCPB مناسب لـ 6 التطبيقs: Desktop and Laptop Main Memory, Embedded Computing and Industrial PCs, Networking and Communications Equipment, Server and Data Center Memory Modules, Test and Measurement Instrumentation, Medical Imaging and Diagnostic Devices.
Desktop and Laptop Main Memory
The K4A8G085WB-BCPB is a core building block for PC4-25600 UDIMM and SO-DIMM modules used in desktop and laptop computers. Its 8Gb density in a 1G x 8 organization allows eight devices to populate a 64-bit channel with ECC on x8 lanes, while the 3200 Mbps data rate at CL22 matches mainstream DDR4 memory controller support. The 1.2V rail reduces module power versus DDR3, and dynamic ODT helps maintain signal integrity across multi-rank topologies. For module designers, the 11mm x 11mm FBGA-78 footprint aligns with standard DIMM land patterns, and TCSR trims standby power in mobile sleep states, extending battery life in portable systems.
موصى به
Embedded Computing and Industrial PCs
Industrial PCs, gateways, and embedded x86/ARM boards use the K4A8G085WB-BCPB soldered down for main memory, gaining 8Gb per device without SO-DIMM sockets that suffer from vibration. The 1.2V DDR4 interface reduces system heat in sealed fanless enclosures, while the 3200 Mbps grade matches common chipsets such as Intel Atom and AMD Ryzen Embedded families. Designers should place per-ball decoupling capacitors and length-match fly-by control nets. For extended-temperature deployments, consider the industrial-coded -BITD sibling, which shares the same footprint, keeping the PCB unchanged while improving the operating envelope.
موصى به
Networking and Communications Equipment
Switches, routers, and network appliances rely on the K4A8G085WB-BCPB for packet buffering and deep-flow tables, where the 16-bank, 4-bank-group architecture improves random-access parallelism and effective bandwidth. The x8 organization supports ECC scrubbing essential for long-uptime infrastructure, and 3200 Mbps operation keeps memory from bottlenecking multi-gigabit data paths. The 78-ball FBGA packages densely on control-line cards. Thermal design should account for continuous full-bandwidth traffic; use air flow plus thermal vias under the package, and enable ODT per the controller's calibration routine to hold margins across temperature.
موصى به
Server and Data Center Memory Modules
In RDIMM and ECC UDIMM builds, the K4A8G085WB-BCPB provides the x8 width required for single-device data correction (SDDC) on Intel and AMD server platforms. The BC-grade CL22 timing at DDR4-3200 aligns with standard server memory profiles, and the B-die silicon is well characterized for high reliability. Registered modules buffer command/address to scale to 16+ DIMMs per channel population. Designers stacking dual-rank DIMMs should verify CK/CA loading and drive-strength settings, and use the manufacturer datasheet refresh tables (7.8 us up to 85C) when configuring the memory controller's refresh rate in thermally constrained chassis.
موصى به
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and arbitrary waveform generators need large, fast capture buffers, making the K4A8G085WB-BCPB a fit with its 3200 Mbps streaming capability and 8Gb per device. Multiple devices in 64-bit or 72-bit (ECC) arrays deliver the sustained write bandwidth needed for real-time acquisition without sample loss. The 1.2V interface reduces noise coupling into sensitive analog front ends versus older 1.5V DDR3 designs. Instrument designers should implement write-leveling and read-training firmware during production calibration, since FBGA soldered-down DRAM in compact boards demands precise per-trace timing closure for full-speed operation.
موصى به
Medical Imaging and Diagnostic Devices
Ultrasound, digital radiography, and lab analyzers accumulate large frame buffers that the K4A8G085WB-BCPB serves with 8Gb density and 3200 Mbps bandwidth, enabling real-time image pipelines at 1.2V power levels suited to patient-adjacent equipment. The soldered FBGA-78 package avoids connector reliability issues in mobile carts, and temperature-compensated self-refresh keeps standby draw low between scans. Designers should verify refresh timing against the datasheet operating window and use ECC-capable x8 organization to protect diagnostic data integrity. Add ground-plane shielding between DRAM and analog capture front ends to preserve low-noise imaging performance.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ K4A8G085WB-BCPB — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | K4A8G085WB-BCRC | K4A8G085WC-BCTD | H5AN8G8NDJR | MT40A1G8WE-075E |
|---|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same (JEDEC) | 78-ball FBGA - same (JEDEC) |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | SK Hynix | Micron |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Data Rate | 3200 Mbps | 2666 Mbps (RC grade) | 2666 Mbps | 2666 Mbps (JR grade) | 1866 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| CAS Latency | 22 | 19 (at grade rate) | 19 | 19 | 15 |
| Bank Architecture | 16 banks / 4 bank groups | 16 banks / 4 bank groups | 16 banks / 4 bank groups | 16 banks / 4 bank groups | 16 banks / 4 bank groups |
أبرز الفروقات
- Full DDR4-3200 (BC grade) speed support (مقابلK4A8G085WB-BCRC)
- High-volume B-die supply base (مقابلMT40A1G8WE-075E)
- ECC-ready x8 organization with TDQS (مقابلK4A8G165WC-BCWE)
ملاحظات التصميم
Route DDR4 using the standard fly-by topology for CK, address, and command nets with on-die termination enabled; keep DQS/DQ length-matched within the controller's specified skew window. Provide at least one 0.1uF decoupling capacitor per VDD/VDDQ ball pair placed within 2mm of the package, plus bulk capacitance at the voltage regulator module. The 78-ball FBGA footprint is JEDEC-standard, so land patterns interchange freely across Samsung, SK Hynix, and Micron x8 DDR4 devices.
The K4A8G085WB-BCPB requires two rails: 1.2V VDD/VDDQ and 2.5V VPP for word-line activation. Size the VPP rail for low average current but be aware activation peaks; do not omit VPP decoupling, as VPP droop causes cell instability errors. Estimated: total active power at DDR4-3200 per device is typically a few hundred milliwatts, dominated by I/O switching; verify against the datasheet IDD figures for your specific traffic pattern.
Configure the memory controller to the BC speed grade timing tables (CL22 at 3200 Mbps) before bring-up; running faster grade timings on slower-coded parts causes intermittent bit errors. Perform write-leveling, read training, and DQS gate calibration at every boot and at temperature extremes. When substituting the -BCRC or -BITD siblings, re-verify SPD data and controller settings - the package is identical but speed bins and temperature coding differ.
معلومات الامتثال
RoHS compliance per standard Samsung DRAM product data; REACH and halogen-free status not stated in provided data.
