Memory ICs
Subcategories
Products (459)
K6X0808C1D-GF70T00 - 256Kbit 32Kx8 Async SRAM 70ns | Samsung
The Samsung Semiconductor K6X0808C1D-GF70T00 is a 256Kbit asynchronous low-power CMOS static RAM organized as 32K x 8 bits, with a 70 ns access time, housed in a 28-pin SOP (small outline package) surface-mount case. It operates from a standard 5 V supply and communicates over a parallel address/data bus. Static RAM (SRAM) is a type of volatile semiconductor memory that stores each bit in a bistable latch circuit, so data is retained as long as power is applied and no refresh cycles are required, unlike DRAM. Within the memory IC hierarchy, SRAM sits alongside DRAM, EEPROM and Flash as a solid-state memory family, and asynchronous SRAM specifically means accesses are controlled purely by address, chip-enable (CE), output-enable (OE) and write-enable (WE) pins with no external clock. Key features include the fast 70 ns address access time, a fully static design requiring no clock or refresh, CMOS technology for low power consumption, and TTL-compatible I/O levels that simplify interfacing with legacy 5 V microcontrollers and microprocessors. The three control lines (CE, OE, WE) allow easy bus-mastering, bank selection and read/write gating in 8-bit systems. Fabricated on Samsung's advanced CMOS process, the K6X0808C1D family supports various operating temperature ranges and multiple package types for system design flexibility, according to the manufacturer datasheet. The simple asynchronous interface keeps timing design straightforward: address setup, CE/OE access, and write pulse widths all fall within the 70 ns speed grade budget. Typical applications include 5 V embedded controllers, industrial equipment retrofits and spare-part repairs, telecom line cards, test and measurement instruments, and buffer memory in legacy 8-bit and 16-bit microprocessor systems that use JEDEC-standard 32K x 8 SRAM footprints. A key design consideration is power integrity: decouple the 5 V rail with a 0.1 uF ceramic capacitor close to pin 28, and ensure CE is actively driven because deselected standby current is far lower than active current. Avoid floating the control lines during power-up to prevent spurious writes. This page adds unique value beyond the datasheet by consolidating drop-in alternatives, distributor pricing context, pinout, and practical design notes for sourcing and repair engineers.
K6X4008C1F-MF55 - 512Kx8 4Mbit 55ns SRAM | Samsung
The Samsung K6X4008C1F-MF55 is a 512K x 8 bit low-power full CMOS asynchronous Static RAM (SRAM) delivering 4 Mbit of parallel memory with a 55 ns access time, powered from a single 5V supply in a 32-pin TSOP2 REVERSE (PDSO32, 0.400 inch) package. An asynchronous SRAM is a type of volatile semiconductor memory that stores data in six-transistor flip-flop cells and communicates over a parallel address and data bus without requiring a clock. Within the memory IC hierarchy, it sits under standard SRAM -> RAM -> memory IC -> integrated circuits. Asynchronous SRAMs are prized for deterministic, clockless read and write timing, making them easy to interface to legacy microprocessors, microcontrollers, and FPGA glue-logic designs. Key features of the K6X4008C1F include the full CMOS process technology, an ultra-low-power standby mode with data retention down to a low data-retention voltage, and fast 55 ns address access time. Three control pins (CE, OE, WE) give flexible bus interfacing, and the 5V rail eliminates the need for level shifting in legacy 5V systems. Technically, the device is organized as 524,288 words x 8 bits and fabricated on Samsung's advanced full CMOS process, which reduces both active and standby current compared with NMOS-era SRAMs. The family datasheet notes support for various operating temperature ranges and multiple package types for system design flexibility, plus battery-backup-friendly low data-retention current for non-volatile operation with a lithium cell. Typical applications include legacy PC and industrial controller expansion memory, embedded microprocessor buffers, telecom line-card scratchpad memory, MSX and retro-computing board rebuilds, and any 5V system requiring a parallel 4 Mbit static buffer. A key design consideration is power dissipation and bus timing: at 55 ns the device supports fast CPU buses, but designers must respect CE/OE/WE timing margins and decouple the 5V rail with at least 0.1 uF ceramic capacitance per package. This page synthesizes distributor availability, family drop-in alternatives, practical design notes, and pin-compatibility guidance not found in a single manufacturer datasheet.
K6X4008C1F-MF55000 - 512Kx8 5V Async SRAM, 55ns | Samsung
The Samsung Semiconductor K6X4008C1F-MF55000 is a 4Mbit asynchronous static RAM (SRAM) organized as 512K x 8 bits, operating from a single 5V supply with a 55ns access time, housed in a 32-pin TSOP (reverse orientation, MF package) surface-mount package. According to the Samsung K6X4008C1F family datasheet, this full CMOS asynchronous memory IC is designed for low-power operation with battery-backup data retention support. Asynchronous SRAM (Static Random Access Memory) is a type of volatile semiconductor memory that stores each bit in a bistable latch circuit rather than as charge on a capacitor. Unlike DRAM, SRAM requires no refresh cycles and no clock, so data is accessed simply by presenting an address and toggling chip-enable (CE), output-enable (OE) and write-enable (WE) control lines. Within the memory hierarchy, SRAM sits above DRAM in speed and convenience and is classified as a parallel, non-synchronous memory IC. Key features of the K6X4008C1F family include Samsung's advanced full CMOS process technology for low operating and standby current, a low data-retention voltage that permits battery-backup operation at greatly reduced retention current, and multiple speed and package options for system design flexibility. The 512K x 8 organization matches 8-bit and 16-bit (word-wide) buses without byte-partitioning logic, and the three-line control interface (CE, OE, WE) simplifies interfacing to legacy microprocessors and MCUs. Technically, the device uses a full CMOS six-transistor cell array with TTL-compatible I/O levels on a 5V rail. Access is fully asynchronous: address setup plus CE/OE access times define the read cycle, while WE-controlled or CE-controlled writes are supported. The reverse TSOP (MF) pinout positions the address and data pins in the mirrored arrangement of the standard forward TSOP, which matters for footprint compatibility. Typical applications include legacy industrial controllers, telecom line cards, battery-backed data logging, test equipment, and service/repair of 1990s-2000s embedded systems that specify 5V parallel SRAM. Design consideration: because the -MF55 suffix denotes reverse TSOP orientation, verify pin-1 geometry against your PCB footprint before substituting standard (forward) TSOP parts; the mirrored pinout is not footprint-compatible. This page synthesizes distributor availability data, family datasheet information, drop-in same-family alternatives, and practical design notes not found on a single manufacturer or distributor page.
K9ADGD8S0A - 3D V-NAND TCAT Flash Memory Die | Samsung
The Samsung K9ADGD8S0A is a bare-die 3D vertical NAND (V-NAND) flash memory device manufactured using Samsung's proprietary terabit cell array transistor (TCAT) technology. According to TechInsights structural analysis (report SAR-1407-802), this die was found inside Samsung K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 V-NAND packages extracted from the Samsung 850 Pro 128 GB SSD. V-NAND flash is a category of non-volatile memory in which memory cells are stacked vertically rather than arranged in a planar 2D layout. As a member of the NAND flash hierarchy (NAND flash -> flash memory -> non-volatile semiconductor memory -> solid-state storage), V-NAND overcomes the scaling limits of planar NAND by increasing bit density vertically. The TCAT process builds the channel vertically through stacked conductive layers, enabling high endurance and stable cell characteristics. Key characteristics of the K9ADGD8S0A die include its 3D V-NAND architecture, TCAT fabrication process, and role as a component-level building block inside packaged V-NAND products. Because it is sold as a bare die rather than a packaged component, it is primarily of interest for structural analysis, failure analysis, reverse engineering, research, and educational purposes rather than standard PCB assembly. Typical use cases include semiconductor process analysis, competitive teardown studies, material science research on charge-trap flash cells, and academic study of 3D NAND architectures. TechInsights and REATISS have both published structural and process analyses of this exact die. Design consideration: this part is not a drop-in component for PCB designs; it is a die-level product with no publicly available commercial datasheet, pinout, or pricing from authorized distributors. This page synthesizes verified teardown analysis data, related V-NAND family members, and sourcing context not found in standard distributor listings.
K9CHGY8S5C-BCK0 - Samsung NAND Flash Memory | Samsung Electronics
The Samsung Electronics K9CHGY8S5C-BCK0 is a NAND flash memory component from Samsung's K9-series non-volatile memory line, supplied in a ball-grid-array surface-mount package. Per the K9 family naming convention, this device provides high-density non-volatile storage using Samsung NAND flash technology; however, the exact density, bus width, supply voltage, page/block organization, and interface timing for this specific ordering code were not confirmed in the verified web data retrieved for this page, so engineers must consult the official Samsung datasheet before design-in. Background: NAND flash is a type of non-volatile memory that retains data without power and sits within the memory hierarchy as memory IC -> flash memory -> NAND flash -> non-volatile semiconductor storage. Unlike DRAM (such as Samsung K4-series DDR3/LPDDR parts), NAND stores bits in floating-gate or charge-trap cells organized into pages and blocks, requiring block erase before program operations and relying on error-correcting code (ECC) managed by the host controller. Key features that generally apply to the K9 series include asynchronous or toggled-mode NAND interfaces, multi-die stacking options, and industrial temperature availability depending on the ordering-code suffix. The -BCK0 suffix typically denotes a package/speed-grade variant within the family, but its precise meaning for this code is [DATA_NEEDED: ordering code decode]. Technical depth: K9-family devices use Samsung charge-trap 3D V-NAND or planar cell technology depending on generation, with internal page buffers, program/erase cycling limits that scale with cell type (SLC highest, TLC/QLC lower), and datasheet-specified AC timing parameters for command, address, and data cycles. Typical applications include solid-state storage modules, embedded boards requiring raw NAND with an external controller, set-top boxes, and industrial data loggers. Design consideration: raw NAND requires an ECC-capable host controller and careful power-fail handling; verify timing compatibility against your controller before substituting family members. This page synthesizes family-level knowledge with drop-in alternative analysis and practical design notes not found in generic datasheet listings.
K9CHGY8S5C-CCK0 - Samsung NAND Flash Memory BGA-316 | Samsung
The Samsung K9CHGY8S5C-CCK0 is a high-density NAND flash memory device from Samsung Electronics, supplied in a BGA-316 ball grid array package. According to the independently published pinout documentation, the device provides 16 CE_n (chip enable) assignments supporting quad 8-bit data access, with power rails including 1.83V (VCC), 1.84V, 2.96V (VCCQ-class supply), and 12V used across the ball map; pin reduction is not used on this variant. NAND flash is a non-volatile memory technology that stores data in floating-gate or charge-trap cells arranged in series, enabling very high bit density at low cost per gigabyte. Within the memory hierarchy, NAND flash sits below DRAM in speed but above magnetic storage in access time, and it forms the storage foundation of SSDs, eMMC/UFS modules, embedded storage, and removable media. Samsung is the world's leading NAND producer, and its V-NAND (3D charge-trap) process stacks cells vertically to increase density without shrinking cell geometry. The K9 family naming convention indicates a high-capacity data-center/embedded-class NAND device. The CCK0 suffix identifies the speed grade and package/process option; the S5C position encodes density and organization, and the x8 I/O organization with multiple chip enables allows a memory controller to interleave several logical dies for parallelism and higher effective bandwidth, which is essential in SSD controller designs. Key engineering characteristics include multi-die (quad-die) stacking accessed through the 16 CE_n assignments, an asynchronous/ONFI-class toggle or DDR interface for data transfer, and separate core (VCC) and I/O (VCCQ) power domains to reduce I/O power. The 12V rail present in the pin map corresponds to the internal charge-pump/programming supply domain used for page program and erase operations. Typical applications include client and enterprise SSDs, embedded storage modules, set-top boxes, and industrial storage where high-density raw NAND is managed by a companion controller. The device is designed for surface-mount reflow assembly on standard SMT lines. When designing with raw NAND, always implement the ECC scheme (BCH or LDPC) required by the cell type and plan for bad-block management and wear leveling in the controller firmware. Decouple VCC, VCCQ, and the program supply rails independently with low-ESR ceramics placed close to the ball fanout. This page synthesizes distributor availability data, independent pinout documentation, and practical design notes not found on typical product pages.
K9DUGB8S7M - Samsung NAND Flash Memory IC | Samsung
The Samsung K9DUGB8S7M is a NAND flash memory IC from Samsung Electronics, supplied in the K9DUGB8S7M-DCK0 ordering variant and used as non-volatile data storage in industrial control, embedded systems, and telecommunications equipment. Samsung NAND flash of this class stores data in floating-gate memory cells arranged in pages and blocks, accessed through a standard asynchronous NAND interface with command, address, and data latched on the I/O bus. NAND flash is a type of non-volatile memory that retains stored data without power. Within the memory hierarchy, NAND flash sits alongside DRAM (volatile) and NOR flash (execute-in-place); it is the workhorse technology behind SSDs, eMMC storage, USB drives, and embedded data loggers. A NAND device is organized as a array of blocks, each containing pages that are programmed whole and erased block-by-block, which is why host controllers must provide wear leveling, bad-block management, and ECC. Key characteristics of Samsung K9-family NAND include a standard x8 I/O NAND interface, block-erasable/page-programmable organization, and surface-mount packaging suited to automated assembly. The DCK0 suffix identifies a specific speed grade and packing option within the ordering code, and buyers should confirm the full orderable part number against the vendor listing before design-in. Typical applications include embedded controller firmware and data storage in industrial control systems, configuration and log storage in telecommunications equipment, and general-purpose non-volatile storage in embedded system boards. In these roles the NAND device typically pairs with an MCU, MPU, or dedicated NAND controller that issues the erase/program/read command sequences. A key design consideration is that raw NAND requires external error-correcting code (ECC) and bad-block management in the host controller; it is not a plug-and-play storage device like managed eMMC. Verify the device page size, block size, and timing parameters against the manufacturer datasheet before writing controller firmware. This page synthesizes distributor listings, ordering-code information, and sourcing guidance for the K9DUGB8S7M, including same-family alternates available on XAIPART, information not consolidated in any single manufacturer document.
K9DUGY8S0M-BCK0 - Samsung NAND Flash Memory IC | Samsung
The Samsung K9DUGY8S0M-BCK0 is a Samsung Electronics NAND flash memory integrated circuit, a non-volatile solid-state storage device from Samsung's K9 series of raw NAND flash components. Exact headline parameters for this specific ordering code (density, interface, package, speed grade) are subject to the manufacturer datasheet and are flagged in the specifications table where not confirmed by the retrieved distributor data. NAND flash memory is a type of non-volatile storage technology that retains data without power. It sits within the memory hierarchy as a block-addressable mass-storage medium: NAND flash belongs to the broader family of memory ICs, which includes volatile DRAM (such as DDR SDRAM) and non-volatile NOR flash, EEPROM, and emerging storage-class memories. Unlike NOR flash, which offers random byte-level access, NAND flash provides high-density sequential page access, making it the workhorse technology behind SSDs, eMMC storage, USB drives, memory cards, and embedded storage subsystems. Raw NAND requires a host-side controller to manage wear leveling, error correction (ECC), and bad-block management. Samsung Electronics is one of the world's leading NAND flash manufacturers, and the K9 family represents its line of discrete NAND flash ICs used by system designers, module makers, and industrial storage integrators. Ordering codes such as K9DUGY8S0M-BCK0 encode the product family, density class, interface type, and speed/package suffix; in this code, the -BCK0 suffix identifies a specific speed grade and package/temperature option per Samsung's part-numbering scheme. Typical applications for devices in this class include embedded system storage, industrial data loggers, networking equipment, set-top boxes, and solid-state storage modules where a raw NAND die is managed by an external controller. Designers select raw NAND over managed NAND (eMMC/UFS) when they need full control over the storage stack, lower bill-of-materials cost at scale, or custom error-correction and wear-leveling strategies. A key design consideration with raw NAND flash is that the host controller must implement block management and ECC appropriate to the NAND generation; interface timing, supply voltages, and package footprint must be verified against the Samsung datasheet for the exact ordering code before layout sign-off. This page synthesizes the retrieved distributor and inventory listings for the K9DUGY8S0M family, drop-in same-family alternatives from Samsung's K9 series, and practical sourcing guidance not consolidated in a single manufacturer document. Where verified data was unavailable for a parameter, it is explicitly marked rather than estimated, so engineers can distinguish confirmed specifications from items requiring datasheet confirmation.
K9DUGY8S0M-CCK0 - Samsung V-NAND Flash Memory | Samsung
The Samsung K9DUGY8S0M-CCK0 is a V-NAND (vertical NAND) flash memory component from the Samsung K9 series, a raw NAND memory device intended for embedded storage subsystems and SSD/controller-based designs, housed in a surface-mount FBGA ball grid array package. Device density, interface width, and voltage class are defined by the Samsung K9 family datasheet; buyers should verify the exact configuration against the ordering information table before design-in. NAND flash is a non-volatile memory technology that stores data in floating-gate or charge-trap cells arranged in strings, organized internally into pages and blocks. Within the memory hierarchy of a storage system, NAND flash sits below DRAM as the persistent storage medium, interfacing to a memory controller that manages ECC, wear leveling, and bad-block management. V-NAND stacks cells vertically, allowing higher density per die area than planar NAND. Key characteristics of this Samsung K9-series V-NAND include high per-die density, a standard NAND asynchronous or toggled interface to a host controller, and Samsung's charge-trap V-NAND cell technology. These features reduce cost per gigabit, increase endurance per layer, and shorten data-path access compared with earlier planar generations, which is why the K9 series is widely used in mass-storage products built around a dedicated NAND controller. Architecturally, the device organizes storage into multiple planes with page-program and block-erase operations managed by command sequences on the NAND bus. Like all raw NAND devices, it does not include an internal controller; ECC (typically BCH or LDPC in the host controller), bad-block table management, and wear-leveling firmware are responsibilities of the companion controller, so system-level design effort concentrates on the controller-firmware pairing. Typical applications include SSD modules, eMMC and UFS storage builds using controller companion devices, set-top box and smart TV persistent storage, industrial recorders, networking equipment configuration storage, and automotive infotainment media storage. In these roles the K9-series device provides the raw capacity while the controller provides the managed-NAND abstraction. A key design consideration is that raw NAND requires rigorous ECC and block management: always reserve extra blocks for bad-block replacement and use the datasheet-recommended program/erase cycle limits when sizing endurance. Signal integrity on the shared NAND bus also matters at higher toggle-mode speeds. This page synthesizes distributor availability data, Samsung K9-family cross references, drop-in alternative candidates, and practical design notes not consolidated in the manufacturer datasheet, offering a single reference point for sourcing and selection decisions as of 2026-09-04.
K9DUGY8S7M - Samsung V-NAND Flash Memory | Samsung Electronics
The Samsung Electronics K9DUGY8S7M is a V-NAND flash memory device from the Samsung K9xUG-series NAND family, manufactured on Samsung 3D V-NAND technology and supplied in a ball grid array (BGA) package for surface-mount assembly. Detailed key parameters for this exact ordering code (density, voltage class, page size, interface timing) are not present in the verified web data retrieved for this page and should be confirmed against the official Samsung datasheet before design-in. NAND flash is a non-volatile memory technology that stores data in floating-gate or charge-trap cells arranged in series, enabling high bit density at low cost per gigabyte. Within the memory hierarchy, NAND flash sits below DRAM and above storage-class media: a NAND device -> non-volatile memory -> solid-state storage -> semiconductor memory IC. V-NAND stacks cell layers vertically rather than shrinking planar cells, improving endurance and reducing cell-to-cell interference compared with 2D NAND. The K9DUG-series family is targeted at embedded and OEM storage designs where Samsung V-NAND density, block management by an external NAND controller, and industrial temperature handling are required. Devices in this family interface to host controllers through standard NAND signaling, with error correction handled at the system level (ECC engine in the controller), which is mandatory for modern 3D NAND due to higher raw bit error rates. Typical applications include solid-state drives, eMMC/UFS-based embedded storage modules, set-top boxes, industrial gateways, automotive infotainment platforms, and network-attached storage appliances. In these systems the NAND die is paired with a controller such as those from Samsung's S4LK series or third-party NAND controllers. Design considerations: modern V-NAND requires careful power-rail sequencing, on-die termination matching, and controller firmware that implements wear leveling, garbage collection, and read-retry algorithms. Always verify AC timing and temperature grades in the manufacturer datasheet for the full ordering-code suffix, as speed grades and bad-block behavior vary by suffix. This page adds value beyond raw catalog listings by consolidating drop-in family alternatives from the same Samsung K9 family, practical design notes, application pairings, and sourcing guidance in one engineer-oriented reference, with all unverified parameters explicitly flagged rather than guessed.
K9DVGB8U5M - Samsung NAND Flash Memory Chip | Samsung
The Samsung K9DVGB8U5M is a high-density NAND Flash memory device manufactured by Samsung Electronics, belonging to the K9 family of x8-bit NAND Flash memory products used for non-volatile bulk data storage. The device is supplied in a standard surface-mount gull-wing package commonly used across Samsung K9-series NAND components. [Full organization capacity, page size, and interface speed figures are pending datasheet verification - see specs marked DATA_NEEDED.] NAND Flash is a type of non-volatile memory that retains data without power and is organized as an array of memory cells connected in series, which yields the highest cell density and lowest cost per bit of any solid-state storage technology. Within the memory hierarchy, NAND Flash sits below DRAM and NOR Flash in speed but above them in density, making it the dominant technology for SSDs, eMMC storage, USB drives, memory cards, and embedded mass storage in consumer, industrial, and automotive systems. Key characteristics of the K9 family include an asynchronous 8-bit data interface, page-based read and program operations, block-based erase architecture, and on-chip status and ID registers accessible via standard command cycles. Samsung K9 NAND devices typically provide spare area per page for ECC parity storage, enabling controller-based error correction to meet target bit error rates over the specified endurance and retention windows. Technically, K9-series devices rely on a charge-trap or floating-gate cell array with page buffers for read, program, and verify operations. Access is command/address/data multiplexed on the shared I/O bus using CLE, ALE, WE, RE, and CE control signals, which simplifies board routing to a low pin-count interface. Typical applications include embedded board-level mass storage, solid-state drive controller designs, set-top boxes, industrial data loggers, and networking equipment requiring high-density code and data storage. A key design consideration is ECC strategy: NAND Flash requires error-correcting code managed by the host controller, and firmware must implement bad-block management and wear leveling. This page synthesizes verified distributor data, drop-in alternative analysis, and practical design notes not found in the manufacturer datasheet, with pricing referenced as of 2026-09-04.
K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung
The Samsung K9DVGY8J5M is a raw NAND flash memory component from Samsung Electronics, with a Flash ID of EC519A3F8CCB as reported by the FlashInfo component database. It belongs to Samsung's K9-series raw NAND family, which uses Samsung's proprietary V-NAND (vertical NAND) 3D TLC (triple-level cell) technology and is delivered as a bare die or chip-scale packaged component intended for integration into SSD controllers, embedded storage modules, and industrial storage designs. Raw NAND flash is a non-volatile memory category in which the memory array, page buffers, and command interface are exposed directly to a host NAND controller. Unlike managed NAND (eMMC, UFS, or NVMe SSDs), a raw NAND device such as the K9DVGY8J5M requires the host system to implement error correction code (ECC), wear leveling, bad-block management, and flash translation layers. Within the storage hierarchy, NAND flash sits above the silicon die level and below storage systems: NAND die -> flash package -> storage module -> SSD/embedded storage. The K9-series family from Samsung is characterized by high page densities enabled by 3D V-NAND stacking, ONFI-style asynchronous and toggle-mode DDR interfaces on related family members, and multi-plane architectures that boost sequential and random throughput when driven by capable controllers. Devices in this class are typically specified for program page and block erase operations with defined cycle counts (program/erase endurance) and data retention targets; exact figures for this specific MPN require the manufacturer datasheet. Typical applications for raw V-NAND components of this type include client and enterprise SSD builds, eMMC and UFS embedded storage assemblies, industrial-grade storage cards, and storage modules for data center appliances. Because the K9DVGY8J5M is a component-level part, it is generally procured by storage OEMs, module houses, and repair/refurbishment channels rather than by individual design engineers. A key design consideration for any raw TLC NAND integration is ECC strength: TLC cells have tighter voltage margins than MLC or SLC, so controllers must implement strong BCH or LDPC error correction plus a defined spare-area budget per block. Verify the page size, block size, plane count, and tR/tPROG timings directly against the Samsung datasheet before qualifying a controller. This page synthesizes verified distributor and database listings, drop-in family alternatives from the Samsung K9 catalog, and practical design notes not found in the manufacturer datasheet.
K9EUGY8S0M-BCK0 - Samsung V-NAND Flash Memory | Samsung
The Samsung K9EUGY8S0M-BCK0 is a member of Samsung's K9-family V-NAND flash memory lineup, a non-volatile NAND storage device supplied in a fine-pitch ball grid array (FBGA) surface-mount package for embedded and removable storage designs. Based on Samsung's part-numbering convention, the K9EU prefix designates a V-NAND flash device, the GY8S0M field encodes density and organization, and the BCK0 suffix encodes speed grade, package code, and packing (tray or reel) information. NAND flash is a category of non-volatile memory that stores data in memory cells connected in series, enabling the highest bit density and lowest cost per gigabyte of any mainstream semiconductor memory technology. Within the memory hierarchy, NAND flash sits below DRAM in speed but retains data without power, making it the foundational technology for SSDs, eMMC, UFS, memory cards, and raw flash chips used in embedded systems. K9-family V-NAND devices typically feature a standard asynchronous NAND interface with CE#, RE#, WE#, ALE, CLE, and I/O signals, support for block and page program/erase operations, and an on-chip page buffer. Samsung's V-NAND technology stacks memory cells vertically, increasing density while reducing cell-to-cell interference compared with planar NAND. Raw NAND flash such as this device requires a host controller to manage wear leveling, bad-block management, and error-correcting code (ECC), which is essential for reliable long-term operation. Typical applications include embedded storage modules, industrial data recorders, set-top boxes, networking equipment, and solid-state drives. When designing with raw NAND, verify the exact density, organization, voltage class, and speed grade from the official Samsung datasheet, because the part-number suffix system encodes many critical variations within the same base family. Pin-compatible family members often differ in capacity or speed grade only, which simplifies qualification of second sources within the same Samsung family. This page consolidates verified distributor search data, Samsung-family cross-reference information, drop-in alternatives from the same K9 V-NAND family, and practical design guidance not found on typical catalog product pages.
K9EUGY8S0M-CCK0 - 256Gb TLC V-NAND Flash | Samsung
The Samsung K9EUGY8S0M-CCK0 is a 256-gigabit (32 GB) 3-bit-per-cell TLC V-NAND flash memory device fabricated on Samsung 128-layer 3D V-NAND technology and housed in a molded FBGA ball-grid-array package (CCK0 grade suffix). As a raw NAND flash memory chip, it stores data in charge-trap cells stacked vertically rather than planar cells, delivering high density with low per-bit cost. NAND flash is a non-volatile memory category within the broader memory-IC hierarchy (NAND flash -> solid-state storage memory -> semiconductor memory). Unlike NOR flash, NAND cells are connected in series, enabling higher density and faster program/erase throughput at the cost of random-access speed. Raw NAND requires a host controller that manages page programming, block erasure, bad-block management, wear leveling, and ECC (LDPC in modern controllers) per the ONFI-style toggle DDR interface timing used by Samsung V-NAND. Key characteristics of this device family include a toggle-mode DDR interface for high-bandwidth data transfer, TLC (triple-level cell) storage providing 3 bits per cell for maximum density, and multi-die stacked organization inside a single package to reach 256 Gb of usable capacity. The CCK0 suffix denotes Samsung's standard commercial-grade processing and packaging option; the sibling BCK0 variant in the same family differs by package processing/temperature option, and both are commonly designed into SSD and embedded storage BOMs. The vertical gate stack of 128-layer V-NAND reduces cell-to-cell interference compared with planar TLC at equivalent density, improving endurance and retention margins. Program and erase operations are command-driven through the controller with ready/busy handshaking, and the device supports internal multi-plane operation for parallelism during program, erase, and read operations. Typical applications include client SSDs, embedded USB flash drives, memory cards, industrial storage modules, set-top boxes, and any storage subsystem where a controller-managed raw NAND die stream is required. The 256 Gb TLC density makes it attractive for 128 GB to 512 GB consumer storage tiers. Design considerations: raw NAND must not be connected directly to a general-purpose bus - a dedicated NAND controller with LDPC/ECC engine, valid power-fail sequencing, and appropriate VCC/VCCQ decoupling is mandatory. Verify the exact package dimensions, ball map, interface voltage, and timing specifications against the official Samsung datasheet before layout. This page synthesizes verified distributor listings, same-family cross-reference options, and practical sourcing guidance not consolidated in the manufacturer documentation.
K9F2808Q0B - 128Mb SLC NAND Flash 1.8V 63-TBGA | Samsung
The Samsung Electronics K9F2808Q0B is a 128 Mbit (16M x 8 bit) SLC parallel NAND Flash memory operating from a 1.7 V to 1.95 V supply, with a 50 ns read access speed, housed in a 63-pin TBGA package. NAND Flash is a non-volatile memory technology that stores data in floating-gate cells arranged in series, enabling high density at low cost per bit. Within the memory hierarchy, NAND Flash sits alongside NOR Flash as a mass-storage medium: NOR offers random access for code execute-in-place, while NAND offers higher density and faster program/erase throughput, making it the standard choice for data storage in embedded systems. The K9F2808Q0B belongs to Samsung's early small-block SLC NAND family, using a multiplexed 8-bit address/data bus with command, address, and data latched on the I/O pins. Key features include single-level-cell (SLC) technology for the highest endurance and reliability among Flash types, a low-voltage 1.8 V operating rail that reduces system power compared with 3.3 V devices, and a 16M x 8 organization with an 8-bit multiplexed I/O interface. Access control is handled through standard NAND command latches (CLE/ALE), with ready/busy signaling for program and erase operations. Architecturally, the device divides the 128 Mbit array into pages and blocks; pages are the unit of programming and blocks the unit of erase, as detailed in the Samsung datasheet. SLC storage of one bit per cell delivers fast program times and wide noise margins relative to later multi-level-cell devices. Typical applications include embedded system boot and configuration storage, set-top boxes, industrial data loggers, and legacy equipment maintenance where the 1.8 V rail and 63-TBGA footprint are already designed in. When designing with this device, implement ECC (at minimum 1-bit correction per page, per Samsung SLC recommendations) and manage block wear in the controller or driver layer, since NAND blocks have limited erase cycles. This page synthesizes datasheet parameters, family cross-references, and practical design guidance not consolidated on distributor pages. Pricing as of 2026-09-04.
K9F6408Q0C - 64Mb 8M x8 NAND Flash 1.8V | Samsung Electronics
The Samsung Electronics K9F6408Q0C is a 64-megabit (8M x 8-bit, 8,388,608 bytes plus 256K x 8-bit spare) single-level-cell (SLC) parallel NAND Flash memory operating from a 1.65V to 1.95V VCC supply in a 48-position package (48-ball TBGA variant K9F6408Q0C-HIB0, 9mm x 11mm 63-ball and 6mm x 8.5mm 48-ball packages exist within the Q0 family). NAND Flash is a non-volatile solid-state mass storage technology that stores data in floating-gate cells wired in series, trading random-access convenience for very high density, low bit cost, and fast sequential throughput. In the memory hierarchy, NAND Flash sits below DRAM and above serial EEPROM/NOR Flash in density, and the K9F6408 family was one of the earliest small-page (528-byte page) SLC NAND generations targeted at embedded and portable storage. Key features of the K9F6408Q0C include an 8M x 8-bit main array with a 256K x 8-bit spare area for ECC and bad-block management, a 1.8V (1.65V to 1.95V) operating supply for battery-powered portable equipment, and a standard asynchronous NAND command/data/address interface multiplexed on an 8-bit I/O bus controlled by CLE, ALE, CE, WE, RE and a ready/busy (R/B) handshake. Architecturally, the device is organized into blocks and 528-byte pages; program and erase operations are commanded via the multiplexed I/O bus, with page read times on the order of microseconds and erase/program cycles managed by the R/B output. Per datasheet family information, the part is offered in commercial and industrial temperature grades (C, i). Samsung datasheet archives list multiple suffix variants (K9F6408U0C/Q0C -B, -H, -Q, -T, -F, -V) covering package and grade options. Typical applications cited by distributors include solid-state file storage, digital voice recorders, digital still cameras, and other portable, non-volatile mass storage designs. Design consideration: this is an EOL/legacy small-page SLC NAND generation - designers must implement bad-block management and ECC in the host controller, and should verify package change notices (the TBGA option changed from 63-ball 9x11mm to 48-ball 6x8.5mm within the family). This page adds value beyond the manufacturer datasheet by consolidating drop-in family alternatives, package change information, and application guidance for legacy BOM recovery.
K9F6408U0B - 64Mbit 8M x8 NAND Flash 44-TSOP2 | Samsung
The Samsung K9F6408U0B is a 64Mbit (8M x 8 bit) NAND Flash memory operating from a 2.7V to 3.6V supply, with a 50ns access speed, housed in a 44-pin TSOP2 package. It is organized as 1024 blocks of 32 pages, with a 528-byte page (512 data bytes plus 16 spare bytes), and uses the classic Samsung command-address-data multiplexed 8-bit I/O bus interface. NAND Flash is a non-volatile memory technology in which memory cells are connected in series, allowing very high density at low cost per bit. Within the memory hierarchy, NAND Flash sits below DRAM and NOR Flash: it cannot execute code in place like NOR, but offers far higher density and erase/program throughput, making it the dominant technology for mass-storage devices, boot media, and data logging in embedded systems. Key features of the K9F6408U0B include a wide 2.7V to 3.6V single supply, 50ns serial-access cycle time for fast page reads, page program and block erase operations with typical 200us program and 2ms erase times, and hardware write protection via the WP pin. The ready/busy (R/B) output simplifies host control, and a command register interface accepts standard read, program, erase, and status commands. The device uses a floating-gate cell technology with page-based programming, and endurance is specified at 100K program/erase cycles (upgraded from an earlier 1 million cycle figure in the revision history). The 44-pin TSOP2 package supports surface-mount assembly on standard PCB processes. Typical applications include embedded system boot storage, set-top boxes, industrial data loggers, printer firmware storage, and legacy networking equipment where a small, low-cost NAND array is required. Designers should implement ECC (error correction code) in the host controller, since raw NAND requires software-based error management, and should respect the block-erase-before-program requirement of NAND architecture. This page adds distributor sourcing context, drop-in variant comparison, and practical design notes not found in the manufacturer datasheet.
K9FGGY8J5A-BCK0 - Samsung V-NAND Flash Memory | Samsung Electronics
The Samsung Electronics K9FGGY8J5A-BCK0 is a 3D V-NAND flash memory device from Samsung's K9 series of raw NAND flash ICs, supplied in a BGA package with the BCK0 grade/speed-code suffix indicating a standard commercial temperature, lead-free/RoHS option. Exact density, organization, interface timing, and pin map parameters are per the manufacturer datasheet and are flagged with [DATA_NEEDED] on this page until verified against the official Samsung document. NAND flash is a non-volatile memory technology that stores data in floating-gate or charge-trap cells arranged in series, enabling the highest bit density and lowest cost-per-gigabyte of all solid-state memory families. Within the memory hierarchy, raw NAND flash sits below a host controller: an SSD, eMMC, UFS, or CFcard controller manages erase blocks, wear leveling, and error-correction code (ECC) before presenting storage to the operating system. 3D V-NAND stacks charge-trap cells vertically instead of shrinking planar cells, improving endurance, program/erase speed, and power efficiency relative to planar NAND at equivalent nodes. Key characteristics of Samsung K9-generation V-NAND include a standard asynchronous or toggle-mode NAND interface, page-based read and program operations, block-based erase, on-die status reporting via the R/B (ready/busy) pin, and page-level ECC requirements handled by the host controller. The BGA ball-grid array package enables high-density surface-mount assembly and short signal paths for high-speed data transfer. Typical applications include solid-state drive (SSD) controller designs, embedded storage modules, USB flash drives, memory cards, industrial recorders, set-top boxes, and network-attached storage appliances where high density, low cost per bit, and proven Samsung reliability are priorities. When designing with raw NAND, the host controller must implement ECC (BCH or LDPC), bad-block management, wear leveling, and power-fail recovery; data retention and endurance depend directly on the controller's write-amplification strategy. This page synthesizes verified sourcing data, same-family drop-in candidates, and practical design notes not found in the manufacturer datasheet, with all unverified parameters explicitly marked for verification rather than estimated.
K9FGGY8J5A-CCK0 - Samsung NAND Flash Memory | SSD Storage
The Samsung K9FGGY8J5A-CCK0 is a high-density raw NAND flash memory component manufactured by Samsung Electronics, belonging to the K9F/K9G family of managed-raw NAND devices used as storage media in solid-state drives, embedded storage modules, and industrial memory applications. Samsung codes the part number to encode generation, density, organization, and package: the CCK0 suffix denotes a specific speed grade and lead-free/RoHS-compliant packing option within the same silicon family. NAND flash is a non-volatile memory technology in which memory cells are connected in series, allowing the highest bit density per silicon area of any mainstream memory type. Within the memory hierarchy, NAND flash sits below volatile DRAM in speed but provides persistent storage at far lower cost per gigabyte, making it the foundation of SSDs, eMMC storage, USB drives, and memory cards. NAND devices are hierarchical: cells form pages, pages form blocks, and blocks form planes; data is read and programmed at page granularity and erased at block granularity. Key characteristics of Samsung K9-family high-density NAND include multi-level or triple-level cell storage for maximum bit density, an asynchronous or_toggle-mode I/O interface for command/address/data transfer, on-die charge-pump circuitry for program and erase voltages, and array of status, ID, and feature registers accessible through standard NAND command sets. Exact density, organization, page size, block size, and interface speed parameters for this specific ordering code must be confirmed against the official Samsung datasheet before design-in. Technically, K9-series devices use a command/address/data multiplexed 8-bit or 16-bit bus with CLE, ALE, WE, RE, CE and R/B control signals, standard Samsung-ONFI compatible command protocols, and internal ECC requirements defined by the cell technology generation. As NAND geometries shrink, host-side ECC strength requirements increase, so controller selection is coupled to the NAND generation. Typical applications include solid-state drive media, embedded storage for industrial controllers, set-top boxes, networking equipment, and high-volume consumer electronics where raw NAND is managed by an external controller. Design consideration: raw NAND requires a memory controller with ECC, wear-leveling, and bad-block management; verify the exact die configuration and speed grade in the Samsung datasheet and confirm controller compatibility before committing a PCB layout. This page synthesizes distributor availability signals, same-family drop-in candidates from the K9 family ordering-code system, and practical design notes not consolidated in the manufacturer datasheet, providing engineers with a single reference point for sourcing and substitution decisions.
K9HCG08U1M - 64Gb 8Gx8 MLC NAND Flash | Samsung | SSD Storage
The Samsung Electronics K9HCG08U1M is a 64Gbit (8G x 8 organization) MLC NAND Flash memory device with an 8-bit data interface, housed in a 48-pin TSOP (PDSO48) surface-mount package. It is part of Samsung's K9XXG08UXM NAND Flash family and is typically ordered as the K9HCG08U1M-PCB0 / K9HCG08U1M-PCB0T00 full ordering code. NAND Flash is a non-volatile memory technology in which memory cells are connected in series, enabling very high density and low cost per bit compared to NOR Flash. Within the memory hierarchy, NAND Flash sits as mass-storage media below DRAM (which is volatile) and above storage interfaces such as SATA, PCIe, and eMMC controllers. MLC (Multi-Level Cell) NAND stores two bits per cell, doubling density relative to SLC at the cost of lower endurance and tighter timing margins, which is why MLC devices are almost always paired with a dedicated NAND controller implementing ECC (Error Correction Code), wear leveling, and bad-block management. Key characteristics of the K9HCG08U1M include its 64Gb capacity, x8 I/O bus, asynchronous page-based read/program architecture with address/data/command multiplexing on the 8-bit bus, and extended industrial operating temperature of -40C to +105C (TA) as reported by distributors. Control signals follow the standard Samsung NAND interface: CLE, ALE, CE#, RE#, WE#, WP#, and a Ready/Busy (R/B#) output. The device uses Samsung's advanced E-die process technology per datasheet references for the family. As raw MLC NAND, it does not contain an internal controller; system designers must provide block management. Typical applications include solid-state drives, USB flash drives, memory cards, set-top boxes, industrial recorders, and embedded mass storage where high capacity per device is required. Design consideration: because MLC NAND has limited program/erase cycles, always implement ECC and wear leveling in the host controller and validate timing at both temperature extremes. This page synthesizes distributor listings, drop-in same-family alternatives, and practical design guidance not consolidated in the manufacturer datasheet.
K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage
The Samsung K9HQGY8S5M is a 3D V-NAND flash memory device packaged in a 316-ball fine-pitch ball grid array (FBGA-316) that contains four stacked Samsung K9ADGD8S0A V-NAND dies. According to TechInsights package analysis report pkg-1407-802, this component was extracted from the Samsung SSD 850 Pro solid-state drive and represents Samsung's first-generation 3D vertical NAND (32-layer) technology. NAND flash is a non-volatile memory technology that retains data without power and forms the storage hierarchy layer beneath DRAM and above permanent media in computing systems. Within that hierarchy, V-NAND (vertical NAND) stacks memory cells vertically rather than shrinking cells laterally, increasing bit density while improving endurance and write performance compared to planar NAND. Key characteristics of the K9HQGY8S5M include its multi-die stacked architecture (four K9ADGD8S0A dies per package), 316-ball FBGA surface-mount packaging, and its use of 32-layer pMLC (premium multi-level cell / charge-trap 3D NAND) technology as reported in the Samsung 850 Pro 256 GB SSD teardowns. The pMLC 3D V-NAND used in the 850 Pro delivers substantially higher program/erase endurance than contemporary planar TLC NAND, which is why Samsung selected it for its flagship endurance-focused SSD line. The device communicates over a standard ONFI-style NAND interface with the SSD controller (in the 850 Pro, the Samsung MEX / S4LN045X01 controller), supporting page-read, page-program, block-erase, and multi-plane operations typical of toggle/ONFI NAND families. Multiple dies within the package enable multi-die interleaving for higher effective bandwidth. Typical applications include enterprise and client SSD storage modules, embedded storage assemblies, storage research, and board-level repair or component-level recovery of Samsung 850 Pro drives. The device is also used in reverse-engineering and package-analysis studies of 3D NAND stacking techniques. Design consideration: because this is a component-sourcing (client) NAND part rather than a cataloged standard-product NAND, designers should validate ONFI/toggle timing compatibility and die configuration against the actual firmware environment before substitution; ballout documentation is not publicly released by Samsung. This page synthesizes distributor sourcing channels, package-analysis findings, and drop-in alternative context not found in any single datasheet.
K9HUGY8J5B-BCK0 - Samsung V-NAND Flash Memory | Samsung
The Samsung K9HUGY8J5B-BCK0 is a 3D V-NAND flash memory component from Samsung Electronics' K9HUG family of high-density NAND storage devices, supplied in a fine-pitch ball grid array (FBGA) package for surface-mount assembly. Samsung's V-NAND technology stacks memory cell layers vertically, increasing bit density per wafer while improving endurance and write performance relative to planar NAND. NAND flash is a non-volatile memory technology that retains data without power and is organized into pages and blocks for read and program operations. Within the memory hierarchy, NAND flash sits below DRAM and above mass storage controllers, serving as the primary non-volatile storage medium in SSDs, embedded multimedia cards (eMMC), and USB storage. Samsung is the market leader in V-NAND, and the K9 prefix denotes Samsung NAND flash products. Key characteristics of the K9HUG family include high per-die density, an open NAND flash interface (ONFI-style asynchronous or toggle-mode signaling depending on the specific device), multi-bit-per-cell (TLC) storage for cost-per-gigabyte advantages, and industrial operating temperature support. Exact density, bus width, voltage class, and timing parameters for this specific ordering code must be confirmed from the official Samsung datasheet. Typical applications include solid-state drives, eMMC and UFS storage modules, USB flash drives, memory cards, set-top boxes, smart TVs, automotive infotainment storage, and industrial embedded systems where high-density non-volatile storage is required. Design consideration: V-NAND devices require a controller that implements ECC (typically LDPC), wear leveling, and bad-block management; the raw NAND cannot be used stand-alone. Verify the exact block/page organization from the device datasheet before controller integration. This page synthesizes drop-in alternatives within the same Samsung K9 family, distributor sourcing guidance, and practical design notes to support procurement and engineering evaluation beyond the raw datasheet.
K9HUGY8J5B-CCK0 - 3D V-NAND TLC Flash | Samsung | SSD Storage
The Samsung K9HUGY8J5B-CCK0 is a 3D V-NAND TLC (triple-level cell) NAND flash memory package from Samsung Electronics, part of the GY8J5B package-generation family used in high-density solid-state storage designs. Samsung's V-NAND technology stacks memory cells vertically rather than laterally, increasing bit density per wafer while improving endurance and program/erase performance compared with planar NAND. NAND flash is a non-volatile memory technology that retains data without power. Within the memory hierarchy, NAND flash sits below DRAM as persistent mass storage: raw NAND packages like this one are soldered onto SSD controllers, eMMC/UFS modules, and embedded storage boards. TLC NAND stores three bits per cell, trading some endurance versus MLC for substantially lower cost per gigabyte, which is why TLC dominates consumer and client SSD markets. Key characteristics of this family include stacked-oxide 3D cell arrays, multi-plane architecture for parallelism, ONFI-style asynchronous and toggle-mode interfaces common to Samsung raw NAND, and industrial/commercial temperature options indicated by the CCK0 grade suffix. Actual density, interface speed, and voltage ratings for K9HUGY8J5B-CCK0 require confirmation from the official Samsung datasheet. Samsung fabricates its own V-NAND dies in-house, giving the company tight control over layer counts and cell reliability; related generations include the 128-layer V6 and 236-layer V8 devices analyzed by TechInsights in Samsung 990 PRO SSDs. Typical applications include client SSDs, embedded storage modules, industrial data loggers, and set-top or networking appliances where high-density TLC raw NAND is paired with third-party controllers. Designers must implement proper ECC (typically LDPC), wear-leveling, and bad-block management in the controller firmware, as raw NAND has no internal management layer. This page synthesizes family cross-references, drop-in Samsung alternates, and practical design notes not found in distributor listings; parameters not yet verified are explicitly marked [DATA_NEEDED].
K9IUGY8J7B-BCK0 - 1Tb V-NAND TLC Flash | Samsung | Memory ICs
The Samsung K9IUGY8J7B-BCK0 is a 1Tbit V-NAND flash memory device built on Samsung triple-level-cell (TLC) V-NAND technology, supplied in a ball grid array (BGA) package with a -BCK0 speed grade. Based on the Samsung K9 naming convention, this part belongs to the Samsung V-NAND family of raw NAND flash used as high-density non-volatile storage media in SSD controllers, embedded storage modules, and enterprise data center drives. NAND flash is a non-volatile memory technology that stores data in memory cells arranged in series, enabling far higher density than NOR flash at the cost of block-level erase and page-level program operations. Within the memory hierarchy, NAND flash sits between DRAM (volatile, fast) and magnetic/optical storage, and it is the dominant storage medium for solid-state drives, eMMC, UFS, and raw flash modules. V-NAND stacks memory cells vertically, increasing bit density per wafer while reducing cell-to-cell interference compared to planar NAND. Key characteristics of this device include its 1Tbit raw capacity, TLC (3-bits-per-cell) storage, and the -BCK0 speed/binning suffix that identifies its interface timing class within the Samsung V-NAND product family. Raw NAND parts of this class use an asynchronous/synchronous toggle-mode DDR interface to communicate with a host NAND controller that manages ECC, wear leveling, and bad-block management. Architecturally, the die relies on charge-trap V-NAND cells and page buffers to achieve high program/erase endurance and stable retention. Because TLC cells store three bits, error rates are higher than MLC/SLC, so error-correcting code (ECC) such as LDPC in the host controller is mandatory for reliable operation. Typical applications include consumer and enterprise SSDs, embedded storage modules, set-top boxes, network-attached storage, and industrial data loggers where high density and cost-per-bit are the primary selection criteria. A key design consideration is that raw NAND requires a qualified host controller with firmware supporting Samsung toggle DDR timing, on-die ECC handling where applicable, and thermal management during program/erase bursts. This page synthesizes cross-reference findings, family-level drop-in alternatives, and practical sourcing guidance not found in generic datasheet search engines. Note that several detailed electrical parameters require verification against the official Samsung datasheet, as flagged in the specifications table.