IS43QR16512B-062AABL vs K4A8G165WB-BCWE Comparison
Detailed side-by-side comparison of IS43QR16512B-062AABL by ISSI, Integrated Silicon Solution Inc and K4A8G165WB-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
ISSI, Integrated Silicon Solution Inc
IS43QR16512B-062AABL
IS43QR16512B-062AABL - 8Gb DDR4 SDRAM 512Mx16 | ISSI
IS43QR16512B-062AABL β ActiveSamsung Electronics
K4A8G165WB-BCWE
K4A8G165WB-BCWE - 8Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A8G165WB-BCWE β ActiveSpecification Comparison
| Parameter | IS43QR16512B-062AABL | K4A8G165WB-BCWE |
|---|---|---|
| Brand | ISSI, Integrated Silicon Solution Inc | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.10 | $6.55 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit | β |
| Organization | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V |
| Data Rate | 3200 MT/s | 3200 Mbps |
| CAS Latency | 22-22-22 | β |
| tRCD | 19 ns | β |
| Package | 96-TWBGA (7.5x13.5 mm) | 96FBGA |
| Operating Temperature | 0Β°C to +95Β°C (case) | 0C to +85C |
| RoHS | Compliant | β |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 96 | β |
| Interface | POD (Pseudo Open Drain) | Parallel |
| Clock Frequency | 1.6 GHz | β |
| Data Bus Width | 16 bit | β |
| Density | β | 8 Gb |
| Access Time (CAS Latency) | β | 19 ns |
| Burst Length | β | 8 |
| Bank Group Architecture | β | Yes |
| On-Die Termination (ODT) | β | Yes, dynamic ODT with ZQ calibration |
| Functions | β | Auto precharge, asynchronous reset, CRC, data mask |
| RoHS Status | β | Compliant |
| Lead Free | β | Yes |