IS43QR16512B-062AABL vs K4A8G165WB-BCWE Comparison
Detailed side-by-side comparison of IS43QR16512B-062AABL by ISSI, Integrated Silicon Solution Inc and K4A8G165WB-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
ISSI, Integrated Silicon Solution Inc
IS43QR16512B-062AABL - 8Gb DDR4 SDRAM 512Mx16 | ISSI
IS43QR16512B-062AABL ✓ ActiveSamsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE ✓ ActiveSpecification Comparison
| Parameter | IS43QR16512B-062AABL | K4A8G165WB-BCWE |
|---|---|---|
| Brand | ISSI, Integrated Silicon Solution Inc | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | — | In Stock |
| Unit Price (USD) | — | $6.25 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit | 8 Gb |
| Organization | 512M x 16 | — |
| Supply Voltage | 1.2 V | 1.2 V |
| Data Rate | 3200 MT/s | 3200 Mbps/pin |
| CAS Latency | 22-22-22 | — |
| tRCD | 19 ns | — |
| Package | 96-TWBGA (7.5x13.5 mm) | 96FBGA |
| Operating Temperature | 0°C to +95°C (case) | 0C to +85C |
| RoHS | Compliant | — |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 96 | — |
| Interface | POD (Pseudo Open Drain) | Parallel |
| Clock Frequency | 1.6 GHz | — |
| Data Bus Width | 16 bit | — |
| Memory Organization | — | 512M x 16 |
| Access Time | — | 19 ns |
| Memory Format | — | DRAM (volatile) |
| Technology | — | DDR4 SDRAM B-die |
| Prefetch | — | 8n |
| Refresh | — | Self-refresh supported |
| Termination | — | On-die termination (ODT) |
| RoHS Status | — | [DATA_NEEDED: RoHS compliance statement] |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |