IS43QR16512B-062AABL vs K4A8G165WB-BCWE Perbandingan
Perbandingan bersamaan detil IS43QR16512B-062AABL dari ISSI, Integrated Silicon Solution Inc dan K4A8G165WB-BCWE dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
ISSI, Integrated Silicon Solution Inc
IS43QR16512B-062AABL - 8Gb DDR4 SDRAM 512Mx16 | ISSI
IS43QR16512B-062AABL ✓ AktifSamsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IS43QR16512B-062AABL | K4A8G165WB-BCWE |
|---|---|---|
| Merek | ISSI, Integrated Silicon Solution Inc | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | — | $6,25 |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Ukuran Memori | 8 Gbit | 8 Gb |
| Organisasi | 512M x 16 | — |
| Tegangan Pemuat | 1.2 V | 1.2 V |
| Laju Data | 3200 MT/s | 3200 Mbps/pin |
| Latensi CAS | 22-22-22 | — |
| tRCD | 19 ns | — |
| Paket | 96-TWBGA (7.5x13.5 mm) | 96FBGA |
| Suhu Kerja | 0°C to +95°C (case) | 0C to +85C |
| RoHS | Compliant | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 96 | — |
| Antarmuka | POD (Pseudo Open Drain) | Parallel |
| Clock Frequency | 1.6 GHz | — |
| Lebar Bus Data | 16 bit | — |
| Memory Organization | — | 512M x 16 |
| Access Time | — | 19 ns |
| Memory Format | — | DRAM (volatile) |
| Technology | — | DDR4 SDRAM B-die |
| Prefetch | — | 8n |
| Refresh | — | Self-refresh supported |
| Termination | — | On-die termination (ODT) |
| Status RoHS | — | [DATA_NEEDED: RoHS compliance statement] |
| Level MSL | — | [DATA_NEEDED: moisture sensitivity level] |