IS43TR16256AL-107MBL vs K4B4G1646E-BYMATCV Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IS43TR16256AL-107MBL sa pamamagitan ng ISSI, Integrated Silicon Solution Inc at K4B4G1646E-BYMATCV sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-107MBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-107MBL ✓ NakahandaSamsung Electronics
K4B4G1646E-BYMATCV - 4Gb DDR3L SDRAM 96-FBGA | Samsung
K4B4G1646E-BYMATCV ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IS43TR16256AL-107MBL | K4B4G1646E-BYMATCV |
|---|---|---|
| Brand | ISSI, Integrated Silicon Solution Inc | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Laki ng Memory | 4 Gbit | 4 Gbit (256M x 16) |
| Organisasyon | 256M x 16 | — |
| Volte ng Pagbibigay | 1.35 V | 1.35 V |
| Rate ng Data | 1866 MT/s | 1866 Mbps |
| Clock Frequency | 933 MHz | — |
| Access Time | 20 ns | — |
| Latensya ng CAS | 13 | Programmable (e.g., 13, 12, 11) |
| Interface | Parallel | — |
| Packhaging | 96-TWBGA (9x13 mm) | 96-ball FBGA |
| Temperature na Operasyon | 0°C to +95°C (case) | — |
| Uri ng Pagpapasok | Surface Mount | — |
| Tindminan RoHS | Compliant | Compliant |
| Burst Length | 8 and 4 (with burst chop) | 8 (with burst chop 4) |
| On-Die Termination | Yes (ODT) | — |
| I/O Voltage (VDDQ) | — | 1.35 V |
| Bilang ng Pins | — | 96 |
| Hanay ng Temperature na Operasyon | — | -40°C to +95°C |
| Number of Banks | — | 8 |
| On-Die Termination (ODT) | — | Yes |
| Auto Precharge | — | Yes |
| Self-Refresh | — | Yes |