IS43TR16256AL-107MBL vs K4B4G1646E-BYMATCV Perbandingan
Perbandingan bersamaan detil IS43TR16256AL-107MBL dari ISSI, Integrated Silicon Solution Inc dan K4B4G1646E-BYMATCV dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-107MBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-107MBL ✓ AktifSamsung Electronics
K4B4G1646E-BYMATCV - 4Gb DDR3L SDRAM 96-FBGA | Samsung
K4B4G1646E-BYMATCV ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IS43TR16256AL-107MBL | K4B4G1646E-BYMATCV |
|---|---|---|
| Merek | ISSI, Integrated Silicon Solution Inc | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR3L SDRAM | DDR3L SDRAM |
| Ukuran Memori | 4 Gbit | 4 Gbit (256M x 16) |
| Organisasi | 256M x 16 | — |
| Tegangan Pemuat | 1.35 V | 1.35 V |
| Laju Data | 1866 MT/s | 1866 Mbps |
| Clock Frequency | 933 MHz | — |
| Access Time | 20 ns | — |
| Latensi CAS | 13 | Programmable (e.g., 13, 12, 11) |
| Antarmuka | Parallel | — |
| Paket | 96-TWBGA (9x13 mm) | 96-ball FBGA |
| Suhu Kerja | 0°C to +95°C (case) | — |
| Tipe Mounting | Surface Mount | — |
| Status RoHS | Compliant | Compliant |
| Burst Length | 8 and 4 (with burst chop) | 8 (with burst chop 4) |
| On-Die Termination | Yes (ODT) | — |
| I/O Voltage (VDDQ) | — | 1.35 V |
| Jumlah Pin | — | 96 |
| Rentang Suhu Kerja | — | -40°C to +95°C |
| Number of Banks | — | 8 |
| On-Die Termination (ODT) | — | Yes |
| Auto Precharge | — | Yes |
| Self-Refresh | — | Yes |