K4A8G165WB-BIRC vs H5TC4G63AFR-PBA Comparison
Detailed side-by-side comparison of K4A8G165WB-BIRC by Samsung Electronics and H5TC4G63AFR-PBA by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BIRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung
K4A8G165WB-BIRC ✓ Active
Specification Comparison
| Parameter | K4A8G165WB-BIRC | H5TC4G63AFR-PBA |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | — |
| Unit Price (USD) | $32.50 | $3.98 |
| Memory Type | DDR4 SDRAM | DDR3L SDRAM |
| Density | 8 Gb | 4Gb |
| Organization | 512M x 16 | 256M x 16 |
| Data Rate | 2400 Mbps | 1866 Mbps (PC3L-14900) |
| Supply Voltage | 1.2 V | — |
| Operating Temperature | -40°C to +95°C | — |
| Package | 96-FBGA | 96-ball FBGA |
| CAS Latency | 15, 16, 17 | — |
| Burst Length | 8 (BL8) and 4 (BC4) | 8 and 4 (with burst chop) |
| Interface | Pseudo-open-drain | 16-bit I/O |
| On-Die Termination | Yes | — |
| Refresh | Auto-refresh and self-refresh | — |
| Row Address | 16K | — |
| Column Address | 1K | — |
| RoHS | Compliant | Compliant |
| Supply Voltage (VDD/VDDQ) | — | 1.35V |
| Ball Pitch | — | 0.8mm |
| Number of Banks | — | 8 |
| CAS Latency (CL) | — | 11, 12, 13 |
| Operating Temperature Range | — | 0°C to +95°C (Tcase) |
| On-Die Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Partial Array Self-Refresh | — | Yes |