K4A8G165WB-BIRC vs H5TC4G63AFR-PBA Comparison
Detailed side-by-side comparison of K4A8G165WB-BIRC by Samsung Electronics and H5TC4G63AFR-PBA by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BIRC
K4A8G165WB-BIRC - 8Gb DDR4 SDRAM x16 | Samsung | 2400 Mbps
K4A8G165WB-BIRC β Active
Specification Comparison
| Parameter | K4A8G165WB-BIRC | H5TC4G63AFR-PBA |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $39.50 | $3.98 |
| Memory Type | DDR4 SDRAM | DDR3L SDRAM |
| Density | 8 Gbit | 4Gb |
| Organization | 512M x 16 | 256M x 16 |
| Data Rate | 2400 Mbps | 1866 Mbps (PC3L-14900) |
| Supply Voltage | 1.2 V | β |
| Operating Temperature Range | -40Β°C to +95Β°C | 0Β°C to +95Β°C (Tcase) |
| Package | 96-ball FBGA | 96-ball FBGA |
| Interface | 16-bit | 16-bit I/O |
| DLL Enabled Mode | Yes | β |
| On-Die Termination (ODT) | Yes | Yes |
| Burst Length | 8, 16 | 8 and 4 (with burst chop) |
| Row Address | 16 bits | β |
| Column Address | 10 bits | β |
| Bank Count | 16 banks | β |
| RoHS Compliant | Yes | β |
| Supply Voltage (VDD/VDDQ) | β | 1.35V |
| Ball Pitch | β | 0.8mm |
| Number of Banks | β | 8 |
| CAS Latency (CL) | β | 11, 12, 13 |
| ZQ Calibration | β | Yes |
| Write Leveling | β | Yes |
| Auto Self-Refresh | β | Yes |
| Partial Array Self-Refresh | β | Yes |
| RoHS | β | Compliant |