K4A8G165WB-BIRC vs H5TC4G63AFR-PBA Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G165WB-BIRC disebabkan oleh Samsung Electronics dan H5TC4G63AFR-PBA disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A8G165WB-BIRC | H5TC4G63AFR-PBA |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $32.50 | $3.98 |
| Jenis Ingatan | DDR4 SDRAM | DDR3L SDRAM |
| Density | 8 Gb | 4Gb |
| Organisasi | 512M x 16 | 256M x 16 |
| Kadar Data | 2400 Mbps | 1866 Mbps (PC3L-14900) |
| Tegangan Pemberi Arus | 1.2 V | — |
| Suhu Operasi | -40°C to +95°C | — |
| Kemasan | 96-FBGA | 96-ball FBGA |
| Latensi CAS | 15, 16, 17 | — |
| Burst Length | 8 (BL8) and 4 (BC4) | 8 and 4 (with burst chop) |
| Antaramuka | Pseudo-open-drain | 16-bit I/O |
| On-Die Termination | Yes | — |
| Refresh | Auto-refresh and self-refresh | — |
| Row Address | 16K | — |
| Column Address | 1K | — |
| RoHS | Compliant | Compliant |
| Supply Voltage (VDD/VDDQ) | — | 1.35V |
| Ball Pitch | — | 0.8mm |
| Number of Banks | — | 8 |
| CAS Latency (CL) | — | 11, 12, 13 |
| Gambaran Suhu Operasi | — | 0°C to +95°C (Tcase) |
| On-Die Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Partial Array Self-Refresh | — | Yes |