K4A8G165WB-BIRC vs H5TC4G63AFR-PBA Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G165WB-BIRC sa pamamagitan ng Samsung Electronics at H5TC4G63AFR-PBA sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G165WB-BIRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung
K4A8G165WB-BIRC ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | K4A8G165WB-BIRC | H5TC4G63AFR-PBA |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | In Stock | — |
| Presyo ng Yunit (USD) | $32.50 | $3.98 |
| Uri ng Memory | DDR4 SDRAM | DDR3L SDRAM |
| Density | 8 Gb | 4Gb |
| Organisasyon | 512M x 16 | 256M x 16 |
| Rate ng Data | 2400 Mbps | 1866 Mbps (PC3L-14900) |
| Volte ng Pagbibigay | 1.2 V | — |
| Temperature na Operasyon | -40°C to +95°C | — |
| Packhaging | 96-FBGA | 96-ball FBGA |
| Latensya ng CAS | 15, 16, 17 | — |
| Burst Length | 8 (BL8) and 4 (BC4) | 8 and 4 (with burst chop) |
| Interface | Pseudo-open-drain | 16-bit I/O |
| On-Die Termination | Yes | — |
| Refresh | Auto-refresh and self-refresh | — |
| Row Address | 16K | — |
| Column Address | 1K | — |
| RoHS | Compliant | Compliant |
| Supply Voltage (VDD/VDDQ) | — | 1.35V |
| Ball Pitch | — | 0.8mm |
| Number of Banks | — | 8 |
| CAS Latency (CL) | — | 11, 12, 13 |
| Hanay ng Temperature na Operasyon | — | 0°C to +95°C (Tcase) |
| On-Die Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Partial Array Self-Refresh | — | Yes |