NT6AN8T6WBJ1B1 vs W634GU6RB09J Comparison
Detailed side-by-side comparison of NT6AN8T6WBJ1B1 by Nanya Technology and W634GU6RB09J by Winbond. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | NT6AN8T6WBJ1B1 | W634GU6RB09J |
|---|---|---|
| Brand | Nanya Technology | Winbond |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR3L SDRAM |
| Memory Size | 8 Gb (512M x 16) | 4Gbit (256M x 16) |
| Data Rate | 3200 MT/s | 1066 MHz (DDR3L-2133) |
| Supply Voltage | 1.2 V | 1.35V |
| I/O Voltage (VDDQ) | 1.2 V | — |
| CAS Latency | 22 cycles | 20 ns |
| Burst Length | 8 (BL8), 4 (BC4) | 8 and 4 |
| Package | 96-ball FBGA | 96-VFBGA (7.5x13mm) |
| Operating Temperature | 0C to +95C (TC) | 0°C to +95°C (Tc) |
| Refresh | Auto-refresh, self-refresh | — |
| On-Die Termination | Yes (ODT) | — |
| Bank Groups | 4 groups of 4 banks | — |
| Row Address | 16 bits | — |
| Column Address | 10 bits | — |
| RoHS Status | Compliant | Compliant |
| Interface | — | Parallel |
| Mounting Type | — | Surface Mount |
| Halogen Free | — | Yes |
| Organization | — | 256M x 16 |
| Number of Pins | — | 96 |
| Ball Pitch | — | 0.8 mm |