YZ48G08V-F9HPI-M vs K4A8G085WC-BIWE 比較
詳細並排比較 YZ48G08V-F9HPI-M 由 Loongtion 與 K4A8G085WC-BIWE 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | YZ48G08V-F9HPI-M | K4A8G085WC-BIWE |
|---|---|---|
| 品牌 | Loongtion | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| 組織 | 1G x 8 | 1G x 8 |
| 資料速率 | 3200 MT/s | 3200 Mbps |
| 供應電壓 | 1.2 V | — |
| 工作溫度範圍 | -40°C to +85°C | -40°C to +95°C |
| Package Type | FBGA78 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 介面 | Parallel | POD-12 |
| CAS 延遲 | [DATA_NEEDED: CAS Latency] | 22 (CL22) |
| Row Cycle Time (tRC) | [DATA_NEEDED: tRC] | — |
| Refresh Cycle Time (tRFC) | [DATA_NEEDED: tRFC] | — |
| RoHS 狀態 | Compliant | Compliant |
| REACH Status | Compliant | — |
| AEC-Q100 | Not Applicable | — |
| Supply Voltage (VDD) | — | 1.2 V |
| Supply Voltage (VDDQ) | — | 1.2 V |
| 封裝 | — | 78-FBGA |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| Refresh | — | Auto-refresh, self-refresh |
| Lead-Free | — | Yes |