YZ48G08V-F9HPI-M vs K4A8G085WC-BIWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci YZ48G08V-F9HPI-M disebabkan oleh Loongtion dan K4A8G085WC-BIWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | YZ48G08V-F9HPI-M | K4A8G085WC-BIWE |
|---|---|---|
| Merek | Loongtion | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 1G x 8 | 1G x 8 |
| Kadar Data | 3200 MT/s | 3200 Mbps |
| Tegangan Pemberi Arus | 1.2 V | — |
| Gambaran Suhu Operasi | -40°C to +85°C | -40°C to +95°C |
| Package Type | FBGA78 | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Antaramuka | Parallel | POD-12 |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | 22 (CL22) |
| Row Cycle Time (tRC) | [DATA_NEEDED: tRC] | — |
| Refresh Cycle Time (tRFC) | [DATA_NEEDED: tRFC] | — |
| Status RoHS | Compliant | Compliant |
| REACH Status | Compliant | — |
| AEC-Q100 | Not Applicable | — |
| Supply Voltage (VDD) | — | 1.2 V |
| Supply Voltage (VDDQ) | — | 1.2 V |
| Kemasan | — | 78-FBGA |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| Refresh | — | Auto-refresh, self-refresh |
| Lead-Free | — | Yes |