IPW60R080P7XKSA1 vs IPW60R041C6FKSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPW60R080P7XKSA1 sa pamamagitan ng Infineon at IPW60R041C6FKSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPW60R080P7XKSA1 IPW60R080P7XKSA1 - 600V CoolMOS P7 N-Channel MOSFET | Infineon

IPW60R080P7XKSA1 - 600V CoolMOS P7 N-Channel MOSFET | Infineon

IPW60R080P7XKSA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPW60R080P7XKSA1 IPW60R041C6FKSA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo NRND
Manufacturer Infineon Technologies —
Product Family CoolMOS P7 —
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc) 37 A —
Power Dissipation (PD, Tc) 129 W —
RDS(on) (typ) 69 mΩ at VGS = 10 V —
Gate-Source Threshold Voltage (VGS(th)) 3.5 V (typ, per datasheet family) —
Gate Charge (Qg, typ) [DATA_NEEDED: Qg value] —
Rise Time / Fall Time (tr/tf) [DATA_NEEDED: tr/tf value] —
Hanay ng Temperature na Operasyon -55 C to +150 C (junction) -55°C to +150°C
Packhaging PG-TO247-3 (TO-247, 3-pin through-hole) PG-TO247-3-1 (TO-247-3)
Uri ng Pagpapasok Through Hole Through Hole
Packaging Tube (XKSA1 ordering suffix) —
Tindminan RoHS Compliant Compliant
Technology — CoolMOS™ C6 (Superjunction N-channel)
Continuous Drain Current (ID, Tc=25°C) — 77.5 A
Power Dissipation (PD, Tc=25°C) — 481 W
On-State Resistance (RDS(on)) — 41 mΩ at VGS=10V
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — 2.5 V to 3.5 V typical
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Rise Time (tr) — [DATA_NEEDED: tr value]
Fall Time (tf) — [DATA_NEEDED: tf value]
Level ng MSL — Not Applicable (Through-hole)
Lead-Free — Yes

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