IPW60R080P7XKSA1 vs IPW60R041C6FKSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPW60R080P7XKSA1 disebabkan oleh Infineon dan IPW60R041C6FKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPW60R080P7XKSA1 | IPW60R041C6FKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | NRND |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS P7 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc) | 37 A | — |
| Power Dissipation (PD, Tc) | 129 W | — |
| RDS(on) (typ) | 69 mΩ at VGS = 10 V | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.5 V (typ, per datasheet family) | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg value] | — |
| Rise Time / Fall Time (tr/tf) | [DATA_NEEDED: tr/tf value] | — |
| Gambaran Suhu Operasi | -55 C to +150 C (junction) | -55°C to +150°C |
| Kemasan | PG-TO247-3 (TO-247, 3-pin through-hole) | PG-TO247-3-1 (TO-247-3) |
| Jenis Pemasangan | Through Hole | Through Hole |
| Packaging | Tube (XKSA1 ordering suffix) | — |
| Status RoHS | Compliant | Compliant |
| Technology | — | CoolMOS™ C6 (Superjunction N-channel) |
| Continuous Drain Current (ID, Tc=25°C) | — | 77.5 A |
| Power Dissipation (PD, Tc=25°C) | — | 481 W |
| On-State Resistance (RDS(on)) | — | 41 mΩ at VGS=10V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 2.5 V to 3.5 V typical |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Rise Time (tr) | — | [DATA_NEEDED: tr value] |
| Fall Time (tf) | — | [DATA_NEEDED: tf value] |
| Aras MSL | — | Not Applicable (Through-hole) |
| Lead-Free | — | Yes |