IPW60R080P7XKSA1 vs IPW60R041C6FKSA1 比較
詳細並排比較 IPW60R080P7XKSA1 由 Infineon 與 IPW60R041C6FKSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPW60R080P7XKSA1 | IPW60R041C6FKSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | NRND |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS P7 | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc) | 37 A | — |
| Power Dissipation (PD, Tc) | 129 W | — |
| RDS(on) (typ) | 69 mΩ at VGS = 10 V | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.5 V (typ, per datasheet family) | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg value] | — |
| Rise Time / Fall Time (tr/tf) | [DATA_NEEDED: tr/tf value] | — |
| 工作溫度範圍 | -55 C to +150 C (junction) | -55°C to +150°C |
| 封裝 | PG-TO247-3 (TO-247, 3-pin through-hole) | PG-TO247-3-1 (TO-247-3) |
| 安裝類型 | Through Hole | Through Hole |
| Packaging | Tube (XKSA1 ordering suffix) | — |
| RoHS 狀態 | Compliant | Compliant |
| Technology | — | CoolMOS™ C6 (Superjunction N-channel) |
| Continuous Drain Current (ID, Tc=25°C) | — | 77.5 A |
| Power Dissipation (PD, Tc=25°C) | — | 481 W |
| On-State Resistance (RDS(on)) | — | 41 mΩ at VGS=10V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 2.5 V to 3.5 V typical |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Rise Time (tr) | — | [DATA_NEEDED: tr value] |
| Fall Time (tf) | — | [DATA_NEEDED: tf value] |
| MSL 等級 | — | Not Applicable (Through-hole) |
| Lead-Free | — | Yes |