H5AN8G8NCJR-RDC vs K4A8G085WC-BCRC Perbandingan
Perbandingan bersamaan detil H5AN8G8NCJR-RDC dari SK hynix dan K4A8G085WC-BCRC dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5AN8G8NCJR-RDC | K4A8G085WC-BCRC |
|---|---|---|
| Merek | SK hynix | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb (1 GB) | 8 Gbit |
| Organisasi | x8 | 1G x 8 |
| Laju Data | up to 2666 Mbps | 2400 Mbps (DDR4-2400) |
| Tegangan Pemuat | 1.2 V (VDD) | 1.2 V |
| Antarmuka | DDR4 (JEDEC standard) | — |
| Bank Architecture | 4 bank groups x 4 banks | — |
| Burst Length | BL8 | — |
| Paket | 78-ball FBGA | 78-ball FBGA (TFBGA) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | [DATA_NEEDED: operating temperature range for -RDC suffix] | 0C to +95C |
| Latensi CAS | [DATA_NEEDED: CAS latency for -RDC speed grade] | — |
| Generation | C-die family (NCJR) | — |
| Lead Free | Yes | — |
| Bebas Halogen | Yes | — |
| Status RoHS | Compliant | Compliant |
| Terminal Pitch | — | 0.8 mm |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic On-Die Termination | — | Yes |
| Data Mask Function | — | Yes |
| Refresh | — | Auto/Self refresh |