H5AN8G8NCJR-RDC vs K4A8G085WC-BCRC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G8NCJR-RDC disebabkan oleh SK hynix dan K4A8G085WC-BCRC disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G8NCJR-RDC | K4A8G085WC-BCRC |
|---|---|---|
| Merek | SK hynix | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb (1 GB) | 8 Gbit |
| Organisasi | x8 | 1G x 8 |
| Kadar Data | up to 2666 Mbps | 2400 Mbps (DDR4-2400) |
| Tegangan Pemberi Arus | 1.2 V (VDD) | 1.2 V |
| Antaramuka | DDR4 (JEDEC standard) | — |
| Bank Architecture | 4 bank groups x 4 banks | — |
| Burst Length | BL8 | — |
| Kemasan | 78-ball FBGA | 78-ball FBGA (TFBGA) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | [DATA_NEEDED: operating temperature range for -RDC suffix] | 0C to +95C |
| Latensi CAS | [DATA_NEEDED: CAS latency for -RDC speed grade] | — |
| Generation | C-die family (NCJR) | — |
| Lead Free | Yes | — |
| Boson Bebas | Yes | — |
| Status RoHS | Compliant | Compliant |
| Terminal Pitch | — | 0.8 mm |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic On-Die Termination | — | Yes |
| Data Mask Function | — | Yes |
| Refresh | — | Auto/Self refresh |