H5AN8G8NCJR-RDC vs K4A8G085WC-BCRC 比較
詳細並排比較 H5AN8G8NCJR-RDC 由 SK hynix 與 K4A8G085WC-BCRC 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN8G8NCJR-RDC | K4A8G085WC-BCRC |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 類別 | Memory ICs | DRAM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb (1 GB) | 8 Gbit |
| 組織 | x8 | 1G x 8 |
| 資料速率 | up to 2666 Mbps | 2400 Mbps (DDR4-2400) |
| 供應電壓 | 1.2 V (VDD) | 1.2 V |
| 介面 | DDR4 (JEDEC standard) | — |
| Bank Architecture | 4 bank groups x 4 banks | — |
| Burst Length | BL8 | — |
| 封裝 | 78-ball FBGA | 78-ball FBGA (TFBGA) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | [DATA_NEEDED: operating temperature range for -RDC suffix] | 0C to +95C |
| CAS 延遲 | [DATA_NEEDED: CAS latency for -RDC speed grade] | — |
| Generation | C-die family (NCJR) | — |
| Lead Free | Yes | — |
| 無鹵素 | Yes | — |
| RoHS 狀態 | Compliant | Compliant |
| Terminal Pitch | — | 0.8 mm |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic On-Die Termination | — | Yes |
| Data Mask Function | — | Yes |
| Refresh | — | Auto/Self refresh |