PDRQL8KCBF12-00 vs K4RAH086VE-BCWM Perbandingan
Perbandingan bersamaan detil PDRQL8KCBF12-00 dari Samsung Electronics dan K4RAH086VE-BCWM dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4RAH086VE-BCWM - DDR5 16Gb 5600Mbps DRAM | Samsung Electronics
K4RAH086VE-BCWM ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | PDRQL8KCBF12-00 | K4RAH086VE-BCWM |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | — | $7,60 |
| Tipe Memori | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gb |
| Organisasi | 2G x 8 | 2G x 8 |
| Laju Data | 7200 MT/s | 5600 Mbps |
| Tegangan Pemuat | 1.1 V | — |
| Paket | FBGA | 82-ball FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | [DATA_NEEDED: Operating temperature range] | 0C to +85C |
| Burst Length | 16 (BL16), burst chop 8 (BC8) | — |
| On-die ECC | Yes | — |
| Refresh | Auto-refresh and self-refresh | [DATA_NEEDED: refresh rate] |
| Antarmuka | Pseudo-differential DQ | — |
| Process Technology | 10nm-class | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Supply Voltage (VDD) | — | 1.1 V |
| Generation | — | DDR5 |
| Bank Groups | — | [DATA_NEEDED: bank group count] |
| Latensi CAS | — | [DATA_NEEDED: CL at 5600 Mbps] |
| VDDQ Voltage | — | [DATA_NEEDED: VDDQ value] |
| Status Lingkungan Hidup | — | Mass Production |
| Manufacturer | — | Samsung Electronics |