PDRQL8KCBF12-00 vs K4RAH086VE-BCWM 比較
詳細並排比較 PDRQL8KCBF12-00 由 Samsung Electronics 與 K4RAH086VE-BCWM 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K4RAH086VE-BCWM - DDR5 16Gb 5600Mbps DRAM | Samsung Electronics
K4RAH086VE-BCWM ✓ 啟用中規格比較
| 參數 | PDRQL8KCBF12-00 | K4RAH086VE-BCWM |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | — | In Stock |
| 單價 (USD) | — | $7.60 |
| 記憶體類型 | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gb |
| 組織 | 2G x 8 | 2G x 8 |
| 資料速率 | 7200 MT/s | 5600 Mbps |
| 供應電壓 | 1.1 V | — |
| 封裝 | FBGA | 82-ball FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | [DATA_NEEDED: Operating temperature range] | 0C to +85C |
| Burst Length | 16 (BL16), burst chop 8 (BC8) | — |
| On-die ECC | Yes | — |
| Refresh | Auto-refresh and self-refresh | [DATA_NEEDED: refresh rate] |
| 介面 | Pseudo-differential DQ | — |
| Process Technology | 10nm-class | — |
| RoHS 狀態 | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Supply Voltage (VDD) | — | 1.1 V |
| Generation | — | DDR5 |
| Bank Groups | — | [DATA_NEEDED: bank group count] |
| CAS 延遲 | — | [DATA_NEEDED: CL at 5600 Mbps] |
| VDDQ Voltage | — | [DATA_NEEDED: VDDQ value] |
| 生命週期狀態 | — | Mass Production |
| Manufacturer | — | Samsung Electronics |