PDRQL8KCBF12-00 vs K4RAH086VE-BCWM Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci PDRQL8KCBF12-00 disebabkan oleh Samsung Electronics dan K4RAH086VE-BCWM disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4RAH086VE-BCWM - DDR5 16Gb 5600Mbps DRAM | Samsung Electronics
K4RAH086VE-BCWM ✓ AktifPengandingan Spesifikasi
| Parametr | PDRQL8KCBF12-00 | K4RAH086VE-BCWM |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | — | $7.60 |
| Jenis Ingatan | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gb |
| Organisasi | 2G x 8 | 2G x 8 |
| Kadar Data | 7200 MT/s | 5600 Mbps |
| Tegangan Pemberi Arus | 1.1 V | — |
| Kemasan | FBGA | 82-ball FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | [DATA_NEEDED: Operating temperature range] | 0C to +85C |
| Burst Length | 16 (BL16), burst chop 8 (BC8) | — |
| On-die ECC | Yes | — |
| Refresh | Auto-refresh and self-refresh | [DATA_NEEDED: refresh rate] |
| Antaramuka | Pseudo-differential DQ | — |
| Process Technology | 10nm-class | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Supply Voltage (VDD) | — | 1.1 V |
| Generation | — | DDR5 |
| Bank Groups | — | [DATA_NEEDED: bank group count] |
| Latensi CAS | — | [DATA_NEEDED: CL at 5600 Mbps] |
| VDDQ Voltage | — | [DATA_NEEDED: VDDQ value] |
| Status Lingkungan Hidup | — | Mass Production |
| Manufacturer | — | Samsung Electronics |