K4B4G1646D-BYK00 vs W634GU6RB09J Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646D-BYK00 disebabkan oleh Samsung Electronics dan W634GU6RB09J disebabkan oleh Winbond. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | K4B4G1646D-BYK00 | W634GU6RB09J |
|---|---|---|
| Merek | Samsung Electronics | Winbond |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Kadar Data | 1600 Mbps | 1066 MHz (DDR3L-2133) |
| Tegangan Pemberi Arus | 1.35 V (also operates at 1.5 V) | 1.35V |
| Kemasan | 96-ball TFBGA | 96-VFBGA (7.5x13mm) |
| Number of Terminals | 96 | — |
| Suhu Operasi | 0°C to 85°C | 0°C to +95°C (Tc) |
| Latensi CAS | Programmable | 20 ns |
| Additional Features | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Boson Bebas | Yes | Yes |
| Package Shape | RECTANGULAR | — |
| Temperature Grade | OTHER | — |
| Saiz Ingatan | — | 4Gbit (256M x 16) |
| Antaramuka | — | Parallel |
| Jenis Pemasangan | — | Surface Mount |
| Status RoHS | — | Compliant |
| Burst Length | — | 8 and 4 |
| Bilangan Pin | — | 96 |
| Ball Pitch | — | 0.8 mm |