K4B4G1646D-BYK00 vs W634GU6RB09J Perbandingan
Perbandingan bersamaan detil K4B4G1646D-BYK00 dari Samsung Electronics dan W634GU6RB09J dari Winbond. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | K4B4G1646D-BYK00 | W634GU6RB09J |
|---|---|---|
| Merek | Samsung Electronics | Winbond |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Laju Data | 1600 Mbps | 1066 MHz (DDR3L-2133) |
| Tegangan Pemuat | 1.35 V (also operates at 1.5 V) | 1.35V |
| Paket | 96-ball TFBGA | 96-VFBGA (7.5x13mm) |
| Number of Terminals | 96 | — |
| Suhu Kerja | 0°C to 85°C | 0°C to +95°C (Tc) |
| Latensi CAS | Programmable | 20 ns |
| Additional Features | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Bebas Halogen | Yes | Yes |
| Package Shape | RECTANGULAR | — |
| Temperature Grade | OTHER | — |
| Ukuran Memori | — | 4Gbit (256M x 16) |
| Antarmuka | — | Parallel |
| Tipe Mounting | — | Surface Mount |
| Status RoHS | — | Compliant |
| Burst Length | — | 8 and 4 |
| Jumlah Pin | — | 96 |
| Ball Pitch | — | 0.8 mm |