STBV45 vs STBV45-AP Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci STBV45 disebabkan oleh STMicroelectronics dan STBV45-AP disebabkan oleh STMicroelectronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr STBV45 STBV45-AP
Merek STMicroelectronics STMicroelectronics
Kategori Transistors Transistors
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor NPN Bipolar Junction Transistor (BJT) NPN Bipolar Junction Transistor (BJT)
Tegangan Pengumpul-Bas (Vcbo) 400 V [DATA_NEEDED: VCBO value]
Tegangan Pengumpul-Pemancar (Vceo) 400 V 400 V
Tegangan Pemancar-Bas (Vebo) [DATA_NEEDED: VEBO rating] [DATA_NEEDED: VEBO value]
Continuous Collector Current (IC) 750 mA 0.75 A
Power Dissipation (Pd) 950 mW —
DC Current Gain (hFE) [DATA_NEEDED: minimum hFE value] [DATA_NEEDED: hFE min/typ/max]
Frekuensi Pertukaran (ft) [DATA_NEEDED: fT value] [DATA_NEEDED: fT]
Tegangan Pengumpul-Pemancar (Vce(sat)) [DATA_NEEDED: VCE(sat) value] —
Gambaran Suhu Operasi [DATA_NEEDED: junction temperature range] [DATA_NEEDED: Tj max]
Kemasan TO-92-3 (through-hole) TO-92AP (Ammopack, radial leads)
Pinout Pin 1: Emitter, Pin 2: Collector, Pin 3: Base (per TO-92 standard) —
Jenis Pemasangan Through Hole Through-Hole (Ammopack tape)
Status RoHS [DATA_NEEDED: RoHS compliance status] Compliant
Technology Multi-epitaxial planar with cellular emitter structure High-voltage multi-epitaxial planar, cellular emitter
Peak Collector Current — [DATA_NEEDED: ICM value]
Total Power Dissipation (Ptot) — [DATA_NEEDED: Ptot at 25C]
Switching Speed — Very high (fast-switching grade)
Reverse Bias SOA — Wide RBSOA per datasheet

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