STBV45 vs STBV45-AP Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng STBV45 sa pamamagitan ng STMicroelectronics at STBV45-AP sa pamamagitan ng STMicroelectronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro STBV45 STBV45-AP
Brand STMicroelectronics STMicroelectronics
Kategorya Transistors Transistors
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor NPN Bipolar Junction Transistor (BJT) NPN Bipolar Junction Transistor (BJT)
Voltage ng Collector-Base (Vcbo) 400 V [DATA_NEEDED: VCBO value]
Voltage ng Collector-Emitter (Vceo) 400 V 400 V
Voltage ng Emitter-Base (Vebo) [DATA_NEEDED: VEBO rating] [DATA_NEEDED: VEBO value]
Continuous Collector Current (IC) 750 mA 0.75 A
Power Dissipation (Pd) 950 mW —
DC Current Gain (hFE) [DATA_NEEDED: minimum hFE value] [DATA_NEEDED: hFE min/typ/max]
Dalas ng Transisyon (ft) [DATA_NEEDED: fT value] [DATA_NEEDED: fT]
Voltage ng Collector-Emitter na Naging饱和 (Vce(sat)) [DATA_NEEDED: VCE(sat) value] —
Hanay ng Temperature na Operasyon [DATA_NEEDED: junction temperature range] [DATA_NEEDED: Tj max]
Packhaging TO-92-3 (through-hole) TO-92AP (Ammopack, radial leads)
Pinout Pin 1: Emitter, Pin 2: Collector, Pin 3: Base (per TO-92 standard) —
Uri ng Pagpapasok Through Hole Through-Hole (Ammopack tape)
Tindminan RoHS [DATA_NEEDED: RoHS compliance status] Compliant
Technology Multi-epitaxial planar with cellular emitter structure High-voltage multi-epitaxial planar, cellular emitter
Peak Collector Current — [DATA_NEEDED: ICM value]
Total Power Dissipation (Ptot) — [DATA_NEEDED: Ptot at 25C]
Switching Speed — Very high (fast-switching grade)
Reverse Bias SOA — Wide RBSOA per datasheet

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