STBV45 vs STBV45-AP 比較
詳細並排比較 STBV45 由 STMicroelectronics 與 STBV45-AP 由 STMicroelectronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
STMicroelectronics
STBV45 - 400V NPN High-Voltage Fast-Switching BJT | STMicroelectronics
STBV45 ✓ 啟用中STMicroelectronics
STBV45-AP - 400V NPN High-Voltage Fast-Switch Transistor | STMicroelectronics
STBV45-AP ✓ 啟用中規格比較
| 參數 | STBV45 | STBV45-AP |
|---|---|---|
| 品牌 | STMicroelectronics | STMicroelectronics |
| 類別 | Transistors | Transistors |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | NPN Bipolar Junction Transistor (BJT) | NPN Bipolar Junction Transistor (BJT) |
| 集極-基極電壓 (Vcbo) | 400 V | [DATA_NEEDED: VCBO value] |
| 集極-射極電壓 (Vceo) | 400 V | 400 V |
| 射極-基極電壓 (Vebo) | [DATA_NEEDED: VEBO rating] | [DATA_NEEDED: VEBO value] |
| Continuous Collector Current (IC) | 750 mA | 0.75 A |
| Power Dissipation (Pd) | 950 mW | — |
| DC Current Gain (hFE) | [DATA_NEEDED: minimum hFE value] | [DATA_NEEDED: hFE min/typ/max] |
| 轉換頻率 (ft) | [DATA_NEEDED: fT value] | [DATA_NEEDED: fT] |
| 集極-射極飽和電壓 (Vce(sat)) | [DATA_NEEDED: VCE(sat) value] | — |
| 工作溫度範圍 | [DATA_NEEDED: junction temperature range] | [DATA_NEEDED: Tj max] |
| 封裝 | TO-92-3 (through-hole) | TO-92AP (Ammopack, radial leads) |
| Pinout | Pin 1: Emitter, Pin 2: Collector, Pin 3: Base (per TO-92 standard) | — |
| 安裝類型 | Through Hole | Through-Hole (Ammopack tape) |
| RoHS 狀態 | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Technology | Multi-epitaxial planar with cellular emitter structure | High-voltage multi-epitaxial planar, cellular emitter |
| Peak Collector Current | — | [DATA_NEEDED: ICM value] |
| Total Power Dissipation (Ptot) | — | [DATA_NEEDED: Ptot at 25C] |
| Switching Speed | — | Very high (fast-switching grade) |
| Reverse Bias SOA | — | Wide RBSOA per datasheet |