W634GU6RB-12 vs K4B4G1646D-BPH90 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci W634GU6RB-12 disebabkan oleh Winbond dan K4B4G1646D-BPH90 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4B4G1646D-BPH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BPH90 ✓ AktifPengandingan Spesifikasi
| Parametr | W634GU6RB-12 | K4B4G1646D-BPH90 |
|---|---|---|
| Merek | Winbond | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | SDRAM - DDR3L | DDR3L SDRAM |
| Saiz Ingatan | 4Gbit | — |
| Organisasi | 256M x 16 | 32M x 16 |
| Antaramuka | Parallel | — |
| Clock Frequency | 933 MHz | — |
| Access Time | 20 ns | — |
| Tegangan Pemberi Arus | 1.35V | 1.35V (DDR3L) |
| Kemasan | 96-VFBGA (7.5x13) | 96FBGA |
| Speed Grade | DDR3L-1600 (11-11-11) | — |
| Suhu Operasi | -40°C to +95°C (12I), -40°C to +105°C (12J) | 0°C to +85°C |
| RoHS | Compliant | — |
| Boson Bebas | Yes | Yes |
| Jenis Pemasangan | Surface Mount | — |
| Bilangan Pin | 96 | — |
| Kadar Data | 1600 MT/s | 2133 Mb/s per pin |
| Density | — | 4Gb |
| Number of Banks | — | 8 |
| Latensi CAS | — | Programmable up to 14 |
| Burst Length | — | 8, 4 (with burst chop) |
| On-Die Termination | — | Yes |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Lead-Free | — | Yes |
| RoHS Compliant | — | Yes |