K4A4G085WE-BCRC vs K4A4G085WD-BCRC Perbandingan
Perbandingan bersamaan detil K4A4G085WE-BCRC dari Samsung Electronics dan K4A4G085WD-BCRC dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A4G085WE-BCRC | K4A4G085WD-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM (D-die) |
| Density | 4 Gbit | — |
| Organisasi | 512M x 8 | 512M x 8 |
| Laju Data | 2400 Mbps | 2400 Mb/s (PC2400) |
| Clock Cycle Time (tCK) | 0.833 ns | — |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Core Voltage (VPP) | 2.5 V | — |
| Paket | FBGA-78 | FBGA-78 (TFBGA) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Process Node Family | Samsung E-die | — |
| Antarmuka | Parallel | Parallel |
| Bank Groups | 4n prefetch DDR4 architecture | — |
| Suhu Kerja | [DATA_NEEDED: Operating Temperature Range] | — |
| Refresh | 8n / 1X refresh (per JEDEC DDR4) | [DATA_NEEDED: Refresh specification] |
| Level MSL | [DATA_NEEDED: Moisture Sensitivity Level] | [DATA_NEEDED: MSL Level] |
| Status RoHS | Compliant (per LCSC listing) | [DATA_NEEDED: RoHS Status] |
| Memory Density | — | 4 Gbit |
| Tegangan Pemuat | — | 1.2 V |
| Number of Terminals | — | 78 |
| Access Mode | — | Multi-bank page burst |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency] |
| Rentang Suhu Kerja | — | [DATA_NEEDED: Operating Temperature Range] |