K4A4G085WE-BCRC vs K4A4G085WD-BCRC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A4G085WE-BCRC sa pamamagitan ng Samsung Electronics at K4A4G085WD-BCRC sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A4G085WD-BCRC - 4Gb DDR4-2400 SDRAM 512Mx8 | Samsung
K4A4G085WD-BCRC ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A4G085WE-BCRC | K4A4G085WD-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM (D-die) |
| Density | 4 Gbit | — |
| Organisasyon | 512M x 8 | 512M x 8 |
| Rate ng Data | 2400 Mbps | 2400 Mb/s (PC2400) |
| Clock Cycle Time (tCK) | 0.833 ns | — |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Core Voltage (VPP) | 2.5 V | — |
| Packhaging | FBGA-78 | FBGA-78 (TFBGA) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Process Node Family | Samsung E-die | — |
| Interface | Parallel | Parallel |
| Bank Groups | 4n prefetch DDR4 architecture | — |
| Temperature na Operasyon | [DATA_NEEDED: Operating Temperature Range] | — |
| Refresh | 8n / 1X refresh (per JEDEC DDR4) | [DATA_NEEDED: Refresh specification] |
| Level ng MSL | [DATA_NEEDED: Moisture Sensitivity Level] | [DATA_NEEDED: MSL Level] |
| Tindminan RoHS | Compliant (per LCSC listing) | [DATA_NEEDED: RoHS Status] |
| Memory Density | — | 4 Gbit |
| Volte ng Pagbibigay | — | 1.2 V |
| Number of Terminals | — | 78 |
| Access Mode | — | Multi-bank page burst |
| Latensya ng CAS | — | [DATA_NEEDED: CAS Latency] |
| Hanay ng Temperature na Operasyon | — | [DATA_NEEDED: Operating Temperature Range] |