K4A4G085WE-BCRC vs K4A4G085WD-BCRC 比較
詳細並排比較 K4A4G085WE-BCRC 由 Samsung Electronics 與 K4A4G085WD-BCRC 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A4G085WE-BCRC | K4A4G085WD-BCRC |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM (D-die) |
| Density | 4 Gbit | — |
| 組織 | 512M x 8 | 512M x 8 |
| 資料速率 | 2400 Mbps | 2400 Mb/s (PC2400) |
| Clock Cycle Time (tCK) | 0.833 ns | — |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Core Voltage (VPP) | 2.5 V | — |
| 封裝 | FBGA-78 | FBGA-78 (TFBGA) |
| 安裝類型 | Surface Mount | Surface Mount |
| Process Node Family | Samsung E-die | — |
| 介面 | Parallel | Parallel |
| Bank Groups | 4n prefetch DDR4 architecture | — |
| 工作溫度 | [DATA_NEEDED: Operating Temperature Range] | — |
| Refresh | 8n / 1X refresh (per JEDEC DDR4) | [DATA_NEEDED: Refresh specification] |
| MSL 等級 | [DATA_NEEDED: Moisture Sensitivity Level] | [DATA_NEEDED: MSL Level] |
| RoHS 狀態 | Compliant (per LCSC listing) | [DATA_NEEDED: RoHS Status] |
| Memory Density | — | 4 Gbit |
| 供應電壓 | — | 1.2 V |
| Number of Terminals | — | 78 |
| Access Mode | — | Multi-bank page burst |
| CAS 延遲 | — | [DATA_NEEDED: CAS Latency] |
| 工作溫度範圍 | — | [DATA_NEEDED: Operating Temperature Range] |