STW45NM50 vs IRFP260MPBF Perbandingan

Perbandingan bersamaan detil STW45NM50 dari STMicroelectronics dan IRFP260MPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum STW45NM50 IRFP260MPBF
Merek STMicroelectronics Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) $9,55 —
Polarity N-Channel —
Drain-Source Voltage (VDS) 500 V 200 V
Continuous Drain Current (ID) at 25°C 45 A —
Continuous Drain Current (ID) at 100°C 30 A —
Pulsed Drain Current (IDM) 180 A [DATA_NEEDED: IDM]
Gate-Source Voltage (VGS) ±30 V —
On-Resistance (RDS(on)) 0.09 ohm —
Gate Charge (Qg) 120 nC —
Avalanche Energy (EAS) 1.2 J —
Power Dissipation (PD) 450 W —
Rentang Suhu Kerja -55°C to +150°C -55C to +175C
Paket TO-247 —
Tipe Mounting Through Hole Through Hole
Status RoHS Compliant Compliant
Bebas Halogen Yes —
Manufacturer — Infineon Technologies
Part Status — Active
FET Type — N-Channel
Technology — MOSFET (Metal Oxide Semiconductor)
Continuous Drain Current (ID) at Tc=25C — 50 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Power Dissipation (PD) at Tc=25C — 300 W
On-Resistance RDS(on) max — 40 mOhm
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th)]
Input Capacitance Ciss — 1560 pF
Total Gate Charge Qg — [DATA_NEEDED: Qg]
Paket / Case — TO-247AC (3-lead through-hole)
Lead-Free — Yes
Avalanche Rated — Yes
Level MSL — Not Applicable (through-hole)

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