STW45NM50 vs IRFP260MPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng STW45NM50 sa pamamagitan ng STMicroelectronics at IRFP260MPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

STMicroelectronics
STW45NM50 STW45NM50 - 45A, 500V N-Channel Power MOSFET | STMicroelectronics

STW45NM50 - 45A, 500V N-Channel Power MOSFET | STMicroelectronics

STW45NM50 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro STW45NM50 IRFP260MPBF
Brand STMicroelectronics Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity N-Channel —
Drain-Source Voltage (VDS) 500 V 200 V
Continuous Drain Current (ID) at 25°C 45 A —
Continuous Drain Current (ID) at 100°C 30 A —
Pulsed Drain Current (IDM) 180 A [DATA_NEEDED: IDM]
Gate-Source Voltage (VGS) ±30 V —
On-Resistance (RDS(on)) 0.09 ohm —
Gate Charge (Qg) 120 nC —
Avalanche Energy (EAS) 1.2 J —
Power Dissipation (PD) 450 W —
Hanay ng Temperature na Operasyon -55°C to +150°C -55C to +175C
Packhaging TO-247 —
Uri ng Pagpapasok Through Hole Through Hole
Tindminan RoHS Compliant Compliant
Wala sa Halogen Yes —
Manufacturer — Infineon Technologies
Part Status — Active
FET Type — N-Channel
Technology — MOSFET (Metal Oxide Semiconductor)
Continuous Drain Current (ID) at Tc=25C — 50 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Power Dissipation (PD) at Tc=25C — 300 W
On-Resistance RDS(on) max — 40 mOhm
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th)]
Input Capacitance Ciss — 1560 pF
Total Gate Charge Qg — [DATA_NEEDED: Qg]
Packhaging / Kaso — TO-247AC (3-lead through-hole)
Lead-Free — Yes
Avalanche Rated — Yes
Level ng MSL — Not Applicable (through-hole)

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