STW45NM50 vs IRFP260MPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci STW45NM50 disebabkan oleh STMicroelectronics dan IRFP260MPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
STMicroelectronics
STW45NM50 - 45A, 500V N-Channel Power MOSFET | STMicroelectronics
STW45NM50 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | STW45NM50 | IRFP260MPBF |
|---|---|---|
| Merek | STMicroelectronics | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $9.55 | — |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 500 V | 200 V |
| Continuous Drain Current (ID) at 25°C | 45 A | — |
| Continuous Drain Current (ID) at 100°C | 30 A | — |
| Pulsed Drain Current (IDM) | 180 A | [DATA_NEEDED: IDM] |
| Gate-Source Voltage (VGS) | ±30 V | — |
| On-Resistance (RDS(on)) | 0.09 ohm | — |
| Gate Charge (Qg) | 120 nC | — |
| Avalanche Energy (EAS) | 1.2 J | — |
| Power Dissipation (PD) | 450 W | — |
| Gambaran Suhu Operasi | -55°C to +150°C | -55C to +175C |
| Kemasan | TO-247 | — |
| Jenis Pemasangan | Through Hole | Through Hole |
| Status RoHS | Compliant | Compliant |
| Boson Bebas | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Technology | — | MOSFET (Metal Oxide Semiconductor) |
| Continuous Drain Current (ID) at Tc=25C | — | 50 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Power Dissipation (PD) at Tc=25C | — | 300 W |
| On-Resistance RDS(on) max | — | 40 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th)] |
| Input Capacitance Ciss | — | 1560 pF |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg] |
| Kemasan / Case | — | TO-247AC (3-lead through-hole) |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes |
| Aras MSL | — | Not Applicable (through-hole) |