W634GU6RB09J vs K4B4G1646D-BYK00 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci W634GU6RB09J disebabkan oleh Winbond dan K4B4G1646D-BYK00 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 ✓ AktifPengandingan Spesifikasi
| Parametr | W634GU6RB09J | K4B4G1646D-BYK00 |
|---|---|---|
| Merek | Winbond | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Saiz Ingatan | 4Gbit (256M x 16) | — |
| Kadar Data | 1066 MHz (DDR3L-2133) | 1600 Mbps |
| Tegangan Pemberi Arus | 1.35V | 1.35 V (also operates at 1.5 V) |
| Latensi CAS | 20 ns | Programmable |
| Kemasan | 96-VFBGA (7.5x13mm) | 96-ball TFBGA |
| Suhu Operasi | 0°C to +95°C (Tc) | 0°C to 85°C |
| Antaramuka | Parallel | — |
| Jenis Pemasangan | Surface Mount | — |
| Status RoHS | Compliant | — |
| Boson Bebas | Yes | Yes |
| Organisasi | 256M x 16 | 256M x 16 |
| Burst Length | 8 and 4 | — |
| Bilangan Pin | 96 | — |
| Ball Pitch | 0.8 mm | — |
| Density | — | 4 Gb |
| Number of Terminals | — | 96 |
| Additional Features | — | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Package Shape | — | RECTANGULAR |
| Temperature Grade | — | OTHER |