W634GU6RB09J vs K4B4G1646D-BYK00 Comparison
Detailed side-by-side comparison of W634GU6RB09J by Winbond and K4B4G1646D-BYK00 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 ✓ ActiveSpecification Comparison
| Parameter | W634GU6RB09J | K4B4G1646D-BYK00 |
|---|---|---|
| Brand | Winbond | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4Gbit (256M x 16) | — |
| Data Rate | 1066 MHz (DDR3L-2133) | 1600 Mbps |
| Supply Voltage | 1.35V | 1.35 V (also operates at 1.5 V) |
| CAS Latency | 20 ns | Programmable |
| Package | 96-VFBGA (7.5x13mm) | 96-ball TFBGA |
| Operating Temperature | 0°C to +95°C (Tc) | 0°C to 85°C |
| Interface | Parallel | — |
| Mounting Type | Surface Mount | — |
| RoHS Status | Compliant | — |
| Halogen Free | Yes | Yes |
| Organization | 256M x 16 | 256M x 16 |
| Burst Length | 8 and 4 | — |
| Number of Pins | 96 | — |
| Ball Pitch | 0.8 mm | — |
| Density | — | 4 Gb |
| Number of Terminals | — | 96 |
| Additional Features | — | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Package Shape | — | RECTANGULAR |
| Temperature Grade | — | OTHER |