IS43TR16256AL-125KBL vs K4B4G1646E-BYMATCV 比較
詳細並排比較 IS43TR16256AL-125KBL 由 ISSI, Integrated Silicon Solution Inc 與 K4B4G1646E-BYMATCV 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-125KBL ✓ 啟用中
規格比較
| 參數 | IS43TR16256AL-125KBL | K4B4G1646E-BYMATCV |
|---|---|---|
| 品牌 | ISSI, Integrated Silicon Solution Inc | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | SDRAM - DDR3L | DDR3L SDRAM |
| 記憶體容量 | 4Gbit (256M x 16) | 4 Gbit (256M x 16) |
| 介面 | Parallel | — |
| Clock Frequency | 800 MHz | — |
| Access Time | 20 ns | — |
| 供應電壓 | 1.35V (backward compatible to 1.5V) | 1.35 V |
| 封裝 | 96-TWBGA (9x13mm) | 96-ball FBGA |
| 安裝類型 | Surface Mount | — |
| 工作溫度 | 0°C ~ 95°C | — |
| Memory Format | DRAM | — |
| Technology | SDRAM - DDR3L | — |
| 資料速率 | 1600 Mbps | 1866 Mbps |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Number of Terminals | 96 | — |
| I/O Voltage (VDDQ) | — | 1.35 V |
| 腳位數 | — | 96 |
| 工作溫度範圍 | — | -40°C to +95°C |
| Number of Banks | — | 8 |
| Burst Length | — | 8 (with burst chop 4) |
| CAS 延遲 | — | Programmable (e.g., 13, 12, 11) |
| On-Die Termination (ODT) | — | Yes |
| Auto Precharge | — | Yes |
| Self-Refresh | — | Yes |