K4B4G1646E-BYMATCV vs IS43TR16256AL-107MBL Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4B4G1646E-BYMATCV sa pamamagitan ng Samsung Electronics at IS43TR16256AL-107MBL sa pamamagitan ng ISSI, Integrated Silicon Solution Inc. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4B4G1646E-BYMATCV - 4Gb DDR3L SDRAM 96-FBGA | Samsung
K4B4G1646E-BYMATCV ✓ NakahandaISSI, Integrated Silicon Solution Inc
IS43TR16256AL-107MBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-107MBL ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4B4G1646E-BYMATCV | IS43TR16256AL-107MBL |
|---|---|---|
| Brand | Samsung Electronics | ISSI, Integrated Silicon Solution Inc |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Laki ng Memory | 4 Gbit (256M x 16) | 4 Gbit |
| Rate ng Data | 1866 Mbps | 1866 MT/s |
| Volte ng Pagbibigay | 1.35 V | 1.35 V |
| I/O Voltage (VDDQ) | 1.35 V | — |
| Packhaging | 96-ball FBGA | 96-TWBGA (9x13 mm) |
| Bilang ng Pins | 96 | — |
| Hanay ng Temperature na Operasyon | -40°C to +95°C | — |
| Number of Banks | 8 | — |
| Burst Length | 8 (with burst chop 4) | 8 and 4 (with burst chop) |
| Latensya ng CAS | Programmable (e.g., 13, 12, 11) | 13 |
| On-Die Termination (ODT) | Yes | — |
| Auto Precharge | Yes | — |
| Self-Refresh | Yes | — |
| Tindminan RoHS | Compliant | Compliant |
| Organisasyon | — | 256M x 16 |
| Clock Frequency | — | 933 MHz |
| Access Time | — | 20 ns |
| Interface | — | Parallel |
| Temperature na Operasyon | — | 0°C to +95°C (case) |
| Uri ng Pagpapasok | — | Surface Mount |
| On-Die Termination | — | Yes (ODT) |