NT5CC256M16CP-DINA vs K4B4G1646D-BYK0 Comparison
Detailed side-by-side comparison of NT5CC256M16CP-DINA by Nanya Technology and K4B4G1646D-BYK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | NT5CC256M16CP-DINA | K4B4G1646D-BYK0 |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V (DDR3L), backward compatible to 1.5 V | 1.35 V (1.5 V compatible) |
| Data Rate | 1600 Mbps (DDR3-1600) | 1600 Mbps (PC3-12800) |
| CAS Latency | 11 | Programmable (e.g., 11, 10, 9) |
| Burst Length | 8 | 8 (with burst chop 4) |
| Package | TFBGA-96, 9 x 13 mm, 0.8 mm pitch | 96-ball FBGA |
| Operating Temperature Range | -40°C to +95°C (industrial), -40°C to +105°C (automotive) | — |
| RoHS | Compliant | — |
| Halogen Free | Yes | — |
| Process Technology | 70nm | — |
| Interface | CMOS | — |
| Access Time | 0.225 ns | — |
| Mounting Type | Surface Mount | — |
| Operating Temperature | — | 0°C to 85°C |
| On-Die Termination | — | Yes |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |
| RoHS Compliant | — | Yes |
| Number of Pins | — | 96 |
| Die Revision | — | D-die |