NXP Semiconductors

MWE6IC9100NR1 - 100W 26V GSM/EDGE RF LDMOS Amplifier | NXP

MPN: MWE6IC9100NR1 ✓ Aktif
26 V (Vdd), 28 V supply rating Vdss TO-270 WB-14 (gull-wing, flat leads) Package 869 MHz to 960 MHz Speed
MOQ: 1 |

MWE6IC9100NR1 Ringkasan

The NXP MWE6IC9100NR1 is a 100 W wideband integrated RF power amplifier engineered for GSM and EDGE base-station applications from 869 MHz to 960 MHz, housed in a TO-270 WB-14 (gull-wing) surface-mount package. This multi-stage LDMOS (Laterally Diffused Metal-Oxide Semiconductor) power IC integrates on-chip input and output matching, a gain of 33.5 dB at 960 MHz, and operates from a 26 V DC supply with a 28 V absolute supply rating. The part was originally introduced by Freescale Semiconductor and is now sold under NXP following the 2015 acquisition, and remains in active production as a building block for cellular infrastructure.

An RF power amplifier (PA) is the final active stage in a wireless transmitter that boosts a low-amplitude radio signal up to watt-level power so it can reach a base-station antenna or the radiated-power budget mandated by a given air interface. LD-MOS is the dominant process technology for sub-3 GHz high-power PAs because of its high breakdown voltage, high gain, and excellent RF ruggedness. NXP's "MWxxIC" family sits at the top of the power-management hierarchy: PA module -> RF front-end -> transceiver -> baseband -> wireless system.

Key features include 100 W typical output power, 33.5 dB linear gain across the 869-960 MHz band, integrated ESD protection, on-chip matching that eliminates external baluns or harmonic filters, and a thermally enhanced gull-wing lead package designed for efficiency-cooling PCB layouts. The broadband response makes a single part number usable across multiple GSM/EDGE channel allocations, simplifying BOM and inventory for multi-band base-station designs.

Typical applications include GSM and GSM/EDGE macro base stations, cellular repeaters, industrial-radio links, and any large-signal common-source amplifier stage in the 800-1000 MHz region. When designing with this part, ensure the PCB thermal plane keeps the case- temperature below 100 C; given the 100 W dissipation and high supply voltage, a substantial copper area or forced-air cooling is mandatory for continuous CW operation.

Alternatif penggantian untuk MWE6IC9100NR1 — paket yang sama, pin-pada-pin kompatibel. Bagian paket yang berbeda memerlukan kerja ulang PCB diabaikan.

Tidak ada alternatif pengganti yang tersedia untuk produk ini.

Permintaan Alternatif

MWE6IC9100NR1 Rating Maksimal & Karakteristik Listrik

Manufacturer NXP Semiconductors (formerly Freescale)
Part Type RF LDMOS Wideband Integrated Power Amplifier
Frequency Range 869 MHz to 960 MHz
RF Type / Application GSM, EDGE
Typical Output Power 100 W (Pout, CW)
Tegangan Pemuat Kerja 26 V (Vdd), 28 V supply rating
Maximum Supply Voltage 32 V (rated)
Power Gain 33.5 dB at 960 MHz
Paket / Case TO-270 WB-14 (gull-wing, flat leads)
Tipe Mounting Surface Mount
Packaging Tape and Reel (TR)
Lead Configuration Flat leads, gull-wing

MWE6IC9100NR1 to-270 wb-14 (gull-wing, flat leads) Diamant Konfigurasi Panduan

Konfigurasi pin untuk MWE6IC9100NR1 (to-270 wb-14 (gull-wing, flat leads) pakai pakai). Komponen analog ini memiliki pin masukan, keluaran, dan pengirim daya. Lihat datasheet produsen untuk konfigurasi pin offset null, kompensasi, dan pengaktifan. Ideal untuk peralatan sinyal dan kabel penggandaran.

Diamant diagram pakai pakai to-270 wb-14 (gull-wing, flat leads) untuk MWE6IC9100NR1

Tidak ada data diatribut pin yang tersedia untuk MWE6IC9100NR1.

Lihat ke: datasheet produk untuk konfigurasi pin penuh.

Aplikasi Umum

MWE6IC9100NR1 cocok untuk 3 aplikasis: Peralatan Sinyal, Pengumpulan Data, Proses Audio.

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Peralatan Sinyal

Memperkuat dan menyaring sinyal sensor menggunakan MWE6IC9100NR1.

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Pengumpulan Data

Merubah sinyal analog untuk pemrosesan digital dengan MWE6IC9100NR1.

🎧

Proses Audio

Perkuatan dan pengolahan sinyal audio dengan MWE6IC9100NR1.

Tidak ada FAQ tersedia untuk produk ini.

Data referensi engineering untuk MWE6IC9100NR1 — pembandingan, panduan desain, dan informasi konformitas.

Informasi Konformitas

RoHS
Unknown
REACH
Unknown
AEC-Q100
Not Applicable
Bebas Logam Lengket
Unknown
Bebas Halogena
Unknown
Mineral Konflik
Unknown

Compliance data not present in the verified web data; confirm with NXP product page before design-in.

Data disahkan pada: 2026-10-15 — data disahkan dan disusun oleh tim engineering komponen XAIPART

Komponen dan Istilah Terkait

NXP Semiconductors Freescale Semiconductor MWE6IC9100NR1 MW6IC9100N MW7IC18100NR1 MD7IC2050GNR1 MWE6IC9080GNR1 RF Power Amplifier RF PA LDMOS GSM EDGE TO-270 WB-14 Gull-wing package Base station Cellular repeater 869 MHz to 960 MHz 100 W output 26 V supply 33.5 dB gain
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