MWE6IC9100NR1 - 100W 26V GSM/EDGE RF LDMOS Amplifier | NXP
MPN: MWE6IC9100NR1 ✓ NakahandaMWE6IC9100NR1 Ulas
An RF power amplifier (PA) is the final active stage in a wireless transmitter that boosts a low-amplitude radio signal up to watt-level power so it can reach a base-station antenna or the radiated-power budget mandated by a given air interface. LD-MOS is the dominant process technology for sub-3 GHz high-power PAs because of its high breakdown voltage, high gain, and excellent RF ruggedness. NXP's "MWxxIC" family sits at the top of the power-management hierarchy: PA module -> RF front-end -> transceiver -> baseband -> wireless system.
Key features include 100 W typical output power, 33.5 dB linear gain across the 869-960 MHz band, integrated ESD protection, on-chip matching that eliminates external baluns or harmonic filters, and a thermally enhanced gull-wing lead package designed for efficiency-cooling PCB layouts. The broadband response makes a single part number usable across multiple GSM/EDGE channel allocations, simplifying BOM and inventory for multi-band base-station designs.
Typical applications include GSM and GSM/EDGE macro base stations, cellular repeaters, industrial-radio links, and any large-signal common-source amplifier stage in the 800-1000 MHz region. When designing with this part, ensure the PCB thermal plane keeps the case- temperature below 100 C; given the 100 W dissipation and high supply voltage, a substantial copper area or forced-air cooling is mandatory for continuous CW operation.
Mga alternatibo na pwedeng ilagay na MWE6IC9100NR1 — parehas na package, pin-to-pin na katugmang. Hindi kasama ang mga bahagi ng iba't-ibang package na nangangailangan ng pagpapaayos ng PCB.
Wala ng magagamit na drop-in alternatibo para sa produkto na ito.
Hilingin ang AlternatiboMWE6IC9100NR1 Mga Pinakamataas na Rating at Electrical Characteristics
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Type | RF LDMOS Wideband Integrated Power Amplifier |
| Frequency Range | 869 MHz to 960 MHz |
| RF Type / Application | GSM, EDGE |
| Typical Output Power | 100 W (Pout, CW) |
| Supply Voltage na Operasyon | 26 V (Vdd), 28 V supply rating |
| Maximum Supply Voltage | 32 V (rated) |
| Power Gain | 33.5 dB at 960 MHz |
| Packhaging / Kaso | TO-270 WB-14 (gull-wing, flat leads) |
| Uri ng Pagpapasok | Surface Mount |
| Packaging | Tape and Reel (TR) |
| Lead Configuration | Flat leads, gull-wing |
Gabay sa Pin Configuration ng MWE6IC9100NR1 to-270 wb-14 (gull-wing, flat leads)
Pin configuration para sa MWE6IC9100NR1 (to-270 wb-14 (gull-wing, flat leads) package). Ang analog component na ito ay may input, output, at power supply pins. Sumangguni sa datasheet ng manufacturer para sa offset null, compensation, at enable pin configurations. Perpekto para sa signal conditioning at amplifier circuits.
Wala ng detalyadong pinout data na magagamit para sa MWE6IC9100NR1.
Sumangguni sa datasheet para sa buong pin configuration.
Tipikal na mga Gamit
MWE6IC9100NR1 ay nararapat para sa 3 aplikasyons: Pagkondisyon ng Signal, Pagkuha ng Data, Pagproseso ng Audio.
Pagkondisyon ng Signal
Pagpapalakas at pag-filter ng mga signal ng sensor gamit ang MWE6IC9100NR1.
Pagkuha ng Data
Pag-convert ng mga analog signal para sa digital processing gamit ang MWE6IC9100NR1.
Pagproseso ng Audio
Pagpapalakas at pagproseso ng audio signal gamit ang MWE6IC9100NR1.
Wala ng FAQ na magagamit para sa produkto na ito.
Impormasyon ng Talumpati sa Engineering for MWE6IC9100NR1 — ikabit, gabay sa disenyo, at impormasyon ng pagsunod sa kautusan.
Impormasyon ng Pagsunod sa Kautusan
Compliance data not present in the verified web data; confirm with NXP product page before design-in.
