NXP Semiconductors
MWE6IC9100NR1 - 100W 26V GSM/EDGE RF LDMOS Amplifier | NXP
MPN： MWE6IC9100NR1 ✓ 啟用中
26 V (Vdd), 28 V supply rating Vdss
TO-270 WB-14 (gull-wing, flat leads) Package
869 MHz to 960 MHz Speed
MOQ： 1 |
MWE6IC9100NR1 概覽
The NXP MWE6IC9100NR1 is a 100 W wideband integrated RF power amplifier engineered for GSM and EDGE base-station applications from 869 MHz to 960 MHz, housed in a TO-270 WB-14 (gull-wing) surface-mount package. This multi-stage LDMOS (Laterally Diffused Metal-Oxide Semiconductor) power IC integrates on-chip input and output matching, a gain of 33.5 dB at 960 MHz, and operates from a 26 V DC supply with a 28 V absolute supply rating. The part was originally introduced by Freescale Semiconductor and is now sold under NXP following the 2015 acquisition, and remains in active production as a building block for cellular infrastructure.
An RF power amplifier (PA) is the final active stage in a wireless transmitter that boosts a low-amplitude radio signal up to watt-level power so it can reach a base-station antenna or the radiated-power budget mandated by a given air interface. LD-MOS is the dominant process technology for sub-3 GHz high-power PAs because of its high breakdown voltage, high gain, and excellent RF ruggedness. NXP's "MWxxIC" family sits at the top of the power-management hierarchy: PA module -> RF front-end -> transceiver -> baseband -> wireless system.
Key features include 100 W typical output power, 33.5 dB linear gain across the 869-960 MHz band, integrated ESD protection, on-chip matching that eliminates external baluns or harmonic filters, and a thermally enhanced gull-wing lead package designed for efficiency-cooling PCB layouts. The broadband response makes a single part number usable across multiple GSM/EDGE channel allocations, simplifying BOM and inventory for multi-band base-station designs.
Typical applications include GSM and GSM/EDGE macro base stations, cellular repeaters, industrial-radio links, and any large-signal common-source amplifier stage in the 800-1000 MHz region. When designing with this part, ensure the PCB thermal plane keeps the case- temperature below 100 C; given the 100 W dissipation and high supply voltage, a substantial copper area or forced-air cooling is mandatory for continuous CW operation.
An RF power amplifier (PA) is the final active stage in a wireless transmitter that boosts a low-amplitude radio signal up to watt-level power so it can reach a base-station antenna or the radiated-power budget mandated by a given air interface. LD-MOS is the dominant process technology for sub-3 GHz high-power PAs because of its high breakdown voltage, high gain, and excellent RF ruggedness. NXP's "MWxxIC" family sits at the top of the power-management hierarchy: PA module -> RF front-end -> transceiver -> baseband -> wireless system.
Key features include 100 W typical output power, 33.5 dB linear gain across the 869-960 MHz band, integrated ESD protection, on-chip matching that eliminates external baluns or harmonic filters, and a thermally enhanced gull-wing lead package designed for efficiency-cooling PCB layouts. The broadband response makes a single part number usable across multiple GSM/EDGE channel allocations, simplifying BOM and inventory for multi-band base-station designs.
Typical applications include GSM and GSM/EDGE macro base stations, cellular repeaters, industrial-radio links, and any large-signal common-source amplifier stage in the 800-1000 MHz region. When designing with this part, ensure the PCB thermal plane keeps the case- temperature below 100 C; given the 100 W dissipation and high supply voltage, a substantial copper area or forced-air cooling is mandatory for continuous CW operation.
直接替換替代品，適用於 MWE6IC9100NR1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此產品無可直接替換的替代品。
申請替代品MWE6IC9100NR1 最大額定值與電氣特性
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Type | RF LDMOS Wideband Integrated Power Amplifier |
| Frequency Range | 869 MHz to 960 MHz |
| RF Type / Application | GSM, EDGE |
| Typical Output Power | 100 W (Pout, CW) |
| 工作電源電壓 | 26 V (Vdd), 28 V supply rating |
| Maximum Supply Voltage | 32 V (rated) |
| Power Gain | 33.5 dB at 960 MHz |
| 封裝 / 外殼 | TO-270 WB-14 (gull-wing, flat leads) |
| 安裝類型 | Surface Mount |
| Packaging | Tape and Reel (TR) |
| Lead Configuration | Flat leads, gull-wing |
MWE6IC9100NR1 to-270 wb-14 (gull-wing, flat leads) 腳位配置指南
MWE6IC9100NR1（to-270 wb-14 (gull-wing, flat leads) 封裝）的腳位配置。 此類比元件具有輸入、輸出與電源腳位。偏移歸零、補償與致能腳位配置請參閱製造商資料表。適用於訊號調理與放大器電路。
無詳細腳位定義資料： MWE6IC9100NR1.
請參閱 資料表 以查看完整腳位配置。
典型應用
MWE6IC9100NR1 適用於 3 應用s: 訊號調理, 資料擷取, 音訊處理.
訊號調理
使用 MWE6IC9100NR1 放大與濾波感測器訊號。
資料擷取
使用 MWE6IC9100NR1 將類比訊號轉換以供數位處理。
音訊處理
使用 MWE6IC9100NR1 進行音訊訊號放大與處理。
此產品無常見問題。
工程參考資料，適用於 MWE6IC9100NR1 — 比較、設計指引及合規資訊。
合規資訊
RoHS
Unknown
REACH
Unknown
AEC-Q100
Not Applicable
無鉛
Unknown
無鹵
Unknown
衝突礦產
Unknown
Compliance data not present in the verified web data; confirm with NXP product page before design-in.
資料驗證日期： 2026-10-15
— 資料由 XAIPART 元件工程團隊驗證及整理
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MW6IC9100N
MW7IC18100NR1
MD7IC2050GNR1
MWE6IC9080GNR1
RF Power Amplifier
RF PA
LDMOS
GSM
EDGE
TO-270 WB-14
Gull-wing package
Base station
Cellular repeater
869 MHz to 960 MHz
100 W output
26 V supply
33.5 dB gain
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