NXP Semiconductors

MWE6IC9100NR1 - 100W 26V GSM/EDGE RF LDMOS Amplifier | NXP

MPN: MWE6IC9100NR1 ✓ Aktif
26 V (Vdd), 28 V supply rating Vdss TO-270 WB-14 (gull-wing, flat leads) Package 869 MHz to 960 MHz Speed
MOQ: 1 |

MWE6IC9100NR1 Ringkasan

The NXP MWE6IC9100NR1 is a 100 W wideband integrated RF power amplifier engineered for GSM and EDGE base-station applications from 869 MHz to 960 MHz, housed in a TO-270 WB-14 (gull-wing) surface-mount package. This multi-stage LDMOS (Laterally Diffused Metal-Oxide Semiconductor) power IC integrates on-chip input and output matching, a gain of 33.5 dB at 960 MHz, and operates from a 26 V DC supply with a 28 V absolute supply rating. The part was originally introduced by Freescale Semiconductor and is now sold under NXP following the 2015 acquisition, and remains in active production as a building block for cellular infrastructure.

An RF power amplifier (PA) is the final active stage in a wireless transmitter that boosts a low-amplitude radio signal up to watt-level power so it can reach a base-station antenna or the radiated-power budget mandated by a given air interface. LD-MOS is the dominant process technology for sub-3 GHz high-power PAs because of its high breakdown voltage, high gain, and excellent RF ruggedness. NXP's "MWxxIC" family sits at the top of the power-management hierarchy: PA module -> RF front-end -> transceiver -> baseband -> wireless system.

Key features include 100 W typical output power, 33.5 dB linear gain across the 869-960 MHz band, integrated ESD protection, on-chip matching that eliminates external baluns or harmonic filters, and a thermally enhanced gull-wing lead package designed for efficiency-cooling PCB layouts. The broadband response makes a single part number usable across multiple GSM/EDGE channel allocations, simplifying BOM and inventory for multi-band base-station designs.

Typical applications include GSM and GSM/EDGE macro base stations, cellular repeaters, industrial-radio links, and any large-signal common-source amplifier stage in the 800-1000 MHz region. When designing with this part, ensure the PCB thermal plane keeps the case- temperature below 100 C; given the 100 W dissipation and high supply voltage, a substantial copper area or forced-air cooling is mandatory for continuous CW operation.

Pilihan pengganti yang segera untuk MWE6IC9100NR1 — sama paket, pin-pin kompatibel. Bahagian paket yang berbeza memerlukan kerja ulang PCB diasingkan.

Tiada pilihan pengganti yang segera untuk produk ini.

Minta Alternatif

MWE6IC9100NR1 Penilaian maksimum & Ciri-ciri Elektrik

Manufacturer NXP Semiconductors (formerly Freescale)
Part Type RF LDMOS Wideband Integrated Power Amplifier
Frequency Range 869 MHz to 960 MHz
RF Type / Application GSM, EDGE
Typical Output Power 100 W (Pout, CW)
Tegangan Pemberi Arus Operasi 26 V (Vdd), 28 V supply rating
Maximum Supply Voltage 32 V (rated)
Power Gain 33.5 dB at 960 MHz
Kemasan / Case TO-270 WB-14 (gull-wing, flat leads)
Jenis Pemasangan Surface Mount
Packaging Tape and Reel (TR)
Lead Configuration Flat leads, gull-wing

Panduan Konfigurasi Pin MWE6IC9100NR1 to-270 wb-14 (gull-wing, flat leads)

Konfigurasi pin untuk MWE6IC9100NR1 (to-270 wb-14 (gull-wing, flat leads) pakai). Komponen analog ini mempunyai pin masukan, keluaran, dan kuasa. Rujuk dokumen pengeluar untuk konfigurasi pengecualian, pemulihan, dan pin aktifkan. Ideal untuk pengawasan isyarat dan litar pengukur.

Garis bentuk pengecah pakai to-270 wb-14 (gull-wing, flat leads) untuk MWE6IC9100NR1

Tiada data garisan pin yang diperoleh untuk MWE6IC9100NR1.

Rujuk kepada lembaran data untuk konfigurasi pin penuh.

Aplikasi Biasa

MWE6IC9100NR1 patut untuk 3 aplikasis: Pengawasan Isyarat, Perolehan Data, Pemrosesan Audio.

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Pengawasan Isyarat

Penaik dan menyaring isyarat sensor menggunakan MWE6IC9100NR1.

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Perolehan Data

Mengubah isyarat analog untuk pemrosesan digital dengan MWE6IC9100NR1.

🎧

Pemrosesan Audio

Penaik dan pemrosesan isyarat audio dengan MWE6IC9100NR1.

Tiada FAQ tersedia untuk produk ini.

Data referensi kejuruteraan untuk MWE6IC9100NR1 — perbandingan, panduan rancangan, dan maklumat kesediaan

Maklumat Kesediaan

RoHS
Unknown
REACH
Unknown
AEC-Q100
Not Applicable
Bosong logam timbal
Unknown
Bosong halogen
Unknown
Mineral konflik
Unknown

Compliance data not present in the verified web data; confirm with NXP product page before design-in.

Data disahkan pada: 2026-10-15 — data yang disahkan dan disusun semula oleh pasukan kejuruteraan komponen XAIPART

Komponen dan Tanda berkaitan

NXP Semiconductors Freescale Semiconductor MWE6IC9100NR1 MW6IC9100N MW7IC18100NR1 MD7IC2050GNR1 MWE6IC9080GNR1 RF Power Amplifier RF PA LDMOS GSM EDGE TO-270 WB-14 Gull-wing package Base station Cellular repeater 869 MHz to 960 MHz 100 W output 26 V supply 33.5 dB gain
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