MT41K256M16TW-093 vs K4B4G1646Q Perbandingan
Perbandingan bersamaan detil MT41K256M16TW-093 dari Micron Technology dan K4B4G1646Q dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | MT41K256M16TW-093 | K4B4G1646Q |
|---|---|---|
| Merek | Micron Technology | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $15,50 | — |
| Tipe Memori | DDR3L SDRAM | DDR3L SDRAM |
| Ukuran Memori | 4Gbit (256M x 16) | — |
| Lebar Bus Data | 16 bit | 16 bits |
| Clock Frequency | 1.066 GHz | — |
| Laju Data | 2133 MT/s | 1866 Mbps (PC3-14900) |
| Access Time | 20 ns | — |
| Tegangan Pemuat | 1.35 V (1.283 V to 1.45 V) | 1.35V |
| Tipe Antarmuka | Parallel | — |
| Paket | 96-FBGA (8x14 mm) | 96-ball FBGA |
| Tipe Mounting | Surface Mount | — |
| Rentang Suhu Kerja | 0°C to +95°C (TC) | — |
| Status RoHS | Compliant | — |
| REACH Status | Compliant | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Density | — | 4Gb |
| Organisasi | — | 256M x 16 |
| Die | — | Q-die |
| Lead-Free | — | Yes |
| Bebas Halogen | — | Yes |
| RoHS Compliant | — | Yes |
| Burst Length | — | 8 (BL8) |
| On-Die Termination | — | Yes (ODT) |
| Latensi CAS | — | Programmable |
| Suhu Kerja | — | [DATA_NEEDED: Operating temperature range] |